Show simple item record

dc.contributor.authorYeddu, Vishal
dc.contributor.authorSeo, Gijun
dc.contributor.authorCruciani, Federico
dc.contributor.authorBeaujuge, Pierre
dc.contributor.authorKim, Do Young
dc.date.accessioned2021-04-15T10:25:34Z
dc.date.available2021-04-15T10:25:34Z
dc.date.issued2019-09-20
dc.identifier.citationYeddu, V., Seo, G., Cruciani, F., Beaujuge, P. M., & Kim, D. Y. (2019). Low-Band-Gap Polymer-Based Infrared-to-Visible Upconversion Organic Light-Emitting Diodes with Infrared Sensitivity up to 1.1 μm. ACS Photonics, 6(10), 2368–2374. doi:10.1021/acsphotonics.9b00669
dc.identifier.issn2330-4022
dc.identifier.issn2330-4022
dc.identifier.doi10.1021/acsphotonics.9b00669
dc.identifier.urihttp://hdl.handle.net/10754/668795
dc.description.abstractAll-organic infrared (IR)-to-visible upconversion organic light-emitting diodes (OLEDs) with an IR sensitivity up to 1100 nm were fabricated using a low-band-gap polymer as the organic IR sensitizing layer. A novel low-band-gap (1 eV) polymer, poly 4-(4,8-bis(5-(2-butyloctyl)thiophen-2-yl)benzo[1,2-b:4,5-b′]dithiophen-2-yl)-6,7-diethyl-[1,2,5] thiadiazolo[3,4-g]quinoxaline (PBDTT-BTQ), with a strong photoresponse in near-IR wavelengths of 700-1100 nm was first synthesized using a thiadiazolo[3,4]quinoxaline (BTQ) and a thiophene-substituted benzo[1,2-b:4,5-b2-b]dithiophene (BDTT) as the electron-withdrawing and donating building blocks, respectively. The near-IR photodetector was then fabricated for evaluating a PBDTT-BTQ as the IR sensitizing layer. The PBDTT-BTQ IR photodetector showed detectivity greater than 10$^{11}$ Jones in the multispectral region (300-1100 nm) and the maximum detectivity of 3.1× 10$^{11}$ Jones at the wavelength of 1000 nm due to significantly reducing dark current (8.8 × 10$^{-6}$ mA/cm$^2$ at -1 V). Finally, the all-organic IR upconversion OLED with a PBDTT-BTQ IR sensitizer successfully converted invisible near-IR light of 700-1100 nm directly to visible green light with a peak emission wavelength of 520 nm. This is the first report of an all-organic IR-to-visible upconversion OLED with near-IR sensitivity up to 1100 nm.
dc.description.sponsorshipThe authors gratefully acknowledge financial support for the research from Korea Institute of Industrial Technology.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsphotonics.9b00669
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.9b00669.
dc.subjectnear-infrared
dc.subjectupconversion
dc.subjectorganic light-emitting diode
dc.subjectlow-band-gap polymer
dc.titleLow-Band-Gap Polymer-Based Infrared-to-Visible Upconversion Organic Light-Emitting Diodes with Infrared Sensitivity up to 1.1 μm
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Division
dc.identifier.journalACS Photonics
dc.rights.embargodate2020-01-01
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Materials Science and Engineering, Oklahoma State University, Tulsa, Oklahoma 74106, United States
dc.identifier.volume6
dc.identifier.issue10
dc.identifier.pages2368-2374
kaust.personCruciani, Federico
kaust.personBeaujuge, Pierre
dc.identifier.eid2-s2.0-85073223856


This item appears in the following Collection(s)

Show simple item record