Investigation of InGaN-based red/green micro-light-emitting diodes
KAUST DepartmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
KAUST Grant NumberBAS/1/1676-01-01
Online Publication Date2021-04-12
Print Publication Date2021-04-15
Permanent link to this recordhttp://hdl.handle.net/10754/668715
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AbstractWe investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98 × 98 µm2 to 17 × 17 µm. The average forward voltage at 10 A/cm2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35 nm) and broader full-width at half maximum (≥50 nm) at 2−50 A/cm2 compared to green µLEDs. We demonstrated that 47 × 47 µm2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.
CitationZhuang, Z., Iida, D., & Ohkawa, K. (2021). Investigation of InGaN-based red/green micro-light-emitting diodes. Optics Letters, 46(8), 1912. doi:10.1364/ol.422579
SponsorsKing Abdullah University of Science and Technology (BAS/1/1676-01-01).
The fabrication processes in this Letter were supported by Nanofabrication Core Labs in KAUST.
PublisherThe Optical Society