Investigation of InGaN-based red/green micro-light-emitting diodes

Abstract

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98 × 98 µm2 to 17 × 17 µm. The average forward voltage at 10 A/cm2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35 nm) and broader full-width at half maximum (≥50 nm) at 2−50 A/cm2 compared to green µLEDs. We demonstrated that 47 × 47 µm2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.