Investigation of InGaN-based red/green micro-light-emitting diodes

License
https://doi.org/10.1364/OA_License_v1#VOR-OA

Type
Article

Authors
Zhuang, Zhe
Iida, Daisuke
Ohkawa, Kazuhiro

KAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program

KAUST Grant Number
BAS/1/1676-01-01

Online Publication Date
2021-04-12

Print Publication Date
2021-04-15

Date
2021-04-12

Submitted Date
2021-02-11

Abstract
We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98 × 98 µm2 to 17 × 17 µm. The average forward voltage at 10 A/cm2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35 nm) and broader full-width at half maximum (≥50 nm) at 2−50 A/cm2 compared to green µLEDs. We demonstrated that 47 × 47 µm2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.

Citation
Zhuang, Z., Iida, D., & Ohkawa, K. (2021). Investigation of InGaN-based red/green micro-light-emitting diodes. Optics Letters, 46(8), 1912. doi:10.1364/ol.422579

Acknowledgements
King Abdullah University of Science and Technology (BAS/1/1676-01-01).
The fabrication processes in this Letter were supported by Nanofabrication Core Labs in KAUST.

Publisher
The Optical Society

Journal
Optics Letters

DOI
10.1364/ol.422579

Additional Links
https://www.osapublishing.org/abstract.cfm?URI=ol-46-8-1912

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