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dc.contributor.authorGuo, Yunfan
dc.contributor.authorShen, Pin-Chun
dc.contributor.authorSu, Cong
dc.contributor.authorLu, Ang-Yu
dc.contributor.authorHempel, Marek
dc.contributor.authorHan, Yimo
dc.contributor.authorJi, Qingqing
dc.contributor.authorLin, Yuxuan
dc.contributor.authorShi, Enzheng
dc.contributor.authorMcVay, Elaine
dc.contributor.authorDou, Letian
dc.contributor.authorMuller, David A.
dc.contributor.authorPalacios, Tomás
dc.contributor.authorLi, Ju
dc.contributor.authorLing, Xi
dc.contributor.authorKong, Jing
dc.date.accessioned2021-04-12T12:25:50Z
dc.date.available2021-04-12T12:25:50Z
dc.date.issued2019-02-12
dc.identifier.citationGuo, Y., Shen, P.-C., Su, C., Lu, A.-Y., Hempel, M., Han, Y., … Kong, J. (2019). Additive manufacturing of patterned 2D semiconductor through recyclable masked growth. Proceedings of the National Academy of Sciences, 116(9), 3437–3442. doi:10.1073/pnas.1816197116
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.doi10.1073/pnas.1816197116
dc.identifier.urihttp://hdl.handle.net/10754/668695
dc.description.abstractThe 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of “2D”-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS2), in arbitrary patterns on insulating SiO2/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS2 patterns. Our technique currently produces arbitrary monolayer MoS2 patterns at a spatial resolution of 2 μm with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm$^{2}$ V$^{−1}$ s$^{−1}$ and on–off current ratio of 10$^{7}$). Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics.
dc.description.sponsorshipWe acknowledge support from Air Force Office of Scientific Research Multidisciplinary University Research Initiative-Foldable and Adaptive Two-Dimensional Electronics Program Grant FA9550-15-1-0514, the Center for Energy Efficient Electronics Science through NSF Grant 0939514, the US Army Research Office through Massachusetts Institute of Technology Institute for Soldier Nanotechnologies Grant 023574, the Center for Integrated Quantum Materials, Science and Technology Center through NSF Grant DMR-1231319 (to Q.J. and Y.L.), and King Abdullah University of Science and Technology Contract OSR-2015-CRG4-2634. Y.H. and D.A.M. acknowledge the Cornell Center for Materials Research for funding through NSF Materials Research Science and Engineering Centers Program DMR-17198751. X.L. acknowledges the support of Boston University.
dc.publisherProceedings of the National Academy of Sciences
dc.relation.urlhttp://www.pnas.org/lookup/doi/10.1073/pnas.1816197116
dc.rightsArchived with thanks to Proceedings of the National Academy of Sciences
dc.titleAdditive manufacturing of patterned 2D semiconductor through recyclable masked growth
dc.typeArticle
dc.identifier.journalProceedings of the National Academy of Sciences
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, United States
dc.contributor.institutionDepartment of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, United States
dc.contributor.institutionSchool of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14850, United States
dc.contributor.institutionDavidson School of Chemical Engineering, Purdue University, West Lafayette, IN, 47907, United States
dc.contributor.institutionDepartment of Chemistry, Boston University, Boston, MA, 02215, United States
dc.contributor.institutionDivision of Materials Science and Engineering, Boston University, Boston, MA, 02215, United States
dc.contributor.institutionPhotonics Center, Boston University, Boston, MA, 02215, United States
dc.identifier.volume116
dc.identifier.issue9
dc.identifier.pages3437-3442
kaust.grant.numberOSR-2015-CRG4-2634
dc.identifier.eid2-s2.0-85062034866
kaust.acknowledged.supportUnitOSR


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