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    Tunable Performance of P-Type Cu$_{2}$O/SnO Bilayer Thin Film Transistors

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    Type
    Article
    Authors
    Al-Jawhari, H.A.
    Caraveo-Frescas, Jesus Alfonso
    Hedhili, Mohamed N. cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Imaging and Characterization Core Lab
    Date
    2014-10
    Permanent link to this record
    http://hdl.handle.net/10754/668619
    
    Metadata
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    Abstract
    Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.
    Citation
    Al-Jawhari, H. A., Caraveo-Frescas, J. A., & Hedhili, M. N. (2014). Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors. Advances in Science and Technology, 93, 260–263. doi:10.4028/www.scientific.net/ast.93.260
    Publisher
    Trans Tech Publications, Ltd.
    Journal
    Advances in Science and Technology
    DOI
    10.4028/www.scientific.net/ast.93.260
    Additional Links
    https://www.scientific.net/AST.93.260
    ae974a485f413a2113503eed53cd6c53
    10.4028/www.scientific.net/ast.93.260
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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