Tunable Performance of P-Type Cu$_{2}$O/SnO Bilayer Thin Film Transistors
Type
ArticleKAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Imaging and Characterization Core Lab
Date
2014-10Permanent link to this record
http://hdl.handle.net/10754/668619
Metadata
Show full item recordAbstract
Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.Citation
Al-Jawhari, H. A., Caraveo-Frescas, J. A., & Hedhili, M. N. (2014). Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors. Advances in Science and Technology, 93, 260–263. doi:10.4028/www.scientific.net/ast.93.260Publisher
Trans Tech Publications, Ltd.Additional Links
https://www.scientific.net/AST.93.260ae974a485f413a2113503eed53cd6c53
10.4028/www.scientific.net/ast.93.260