Spin-dependent shot noise in MgO-based magnetic tunnel junctions under noncollinear magnetization alignment
Type
ArticleAuthors
Zhang, Yiou
Xiao, Gang

Date
2019-12-02Permanent link to this record
http://hdl.handle.net/10754/668616
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Show full item recordAbstract
We report experimental measurements of shot noise in MgO-based magnetic tunnel junctions (MTJs) upon angular magnetization rotation in the free layer. The normalized shot noise (the Fano factor) is found to be sub-Poissonian and exhibits a sinusoidal-like variation over the relative magnetic orientation between the free and the pinned layer inside the MTJs. The observed sub-Poissonian statistics provides direct evidence of electron sequential tunneling mediated by localized states inside the tunnel barrier. The variation of the Fano factor can be interpreted in terms of a semi-classical model that we propose. Based on this model, the variation of the Fano factor can be used to reveal microscopic details of the tunneling barrier.Citation
Zhang, Y., & Xiao, G. (2019). Spin-dependent shot noise in MgO-based magnetic tunnel junctions under noncollinear magnetization alignment. Physical Review B, 100(22). doi:10.1103/physrevb.100.224402Sponsors
We thank Wenzhe Zhang for his help and fruitful discussion. This work was supported by King Abdullah University of Science and Technology (KAUST) through the Sensor Initiative.Publisher
American Physical Society (APS)Journal
Physical Review BAdditional Links
https://link.aps.org/doi/10.1103/PhysRevB.100.224402ae974a485f413a2113503eed53cd6c53
10.1103/physrevb.100.224402