Spin-dependent shot noise in MgO-based magnetic tunnel junctions under noncollinear magnetization alignment
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AbstractWe report experimental measurements of shot noise in MgO-based magnetic tunnel junctions (MTJs) upon angular magnetization rotation in the free layer. The normalized shot noise (the Fano factor) is found to be sub-Poissonian and exhibits a sinusoidal-like variation over the relative magnetic orientation between the free and the pinned layer inside the MTJs. The observed sub-Poissonian statistics provides direct evidence of electron sequential tunneling mediated by localized states inside the tunnel barrier. The variation of the Fano factor can be interpreted in terms of a semi-classical model that we propose. Based on this model, the variation of the Fano factor can be used to reveal microscopic details of the tunneling barrier.
CitationZhang, Y., & Xiao, G. (2019). Spin-dependent shot noise in MgO-based magnetic tunnel junctions under noncollinear magnetization alignment. Physical Review B, 100(22). doi:10.1103/physrevb.100.224402
SponsorsWe thank Wenzhe Zhang for his help and fruitful discussion. This work was supported by King Abdullah University of Science and Technology (KAUST) through the Sensor Initiative.
PublisherAmerican Physical Society (APS)
JournalPhysical Review B