Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers
Type
ArticleAuthors
Min, Jung-HongLi, Kuang-Hui

Kim, Yong-Hyeon
Min, Jungwook

Kang, Chun Hong

Kim, Kyoung-Ho
Lee, Jae-Seong
Lee, Kwang Jae
Jeong, Seong-Min
Lee, Dong-Seon

Bae, Si-Young
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionElectrical and Computer Engineering Program
Material Science and Engineering
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
KAUST Grant Number
BAS/1/1614-01-01KACST TIC R2-FP-008
Date
2021-03-12Online Publication Date
2021-03-12Print Publication Date
2021-03-24Embargo End Date
2022-03-12Submitted Date
2021-01-16Permanent link to this record
http://hdl.handle.net/10754/668353
Metadata
Show full item recordAbstract
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga<sub>2</sub>O<sub>3</sub> nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga<sub>2</sub>O<sub>3</sub> direct-epitaxy on the EG. The β-Ga<sub>2</sub>O<sub>3</sub> layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.Citation
Min, J.-H., Li, K.-H., Kim, Y.-H., Min, J.-W., Kang, C. H., Kim, K.-H., … Ooi, B. S. (2021). Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. ACS Applied Materials & Interfaces. doi:10.1021/acsami.1c01042Sponsors
The work was support by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. We acknowledge access to the KAUST Imaging and Characterization Core Lab for optical and electron microscopy measurements, and access to the Nanofabrication Core Lab for fabrication process of Ni stressor and devices. This work was also supported by Ceramic Strategic Research Program (KPP200001) through Korea Institute of Ceramic Engineering and Technology (KICET). J.-W.M., T.K.N., and B.S.O. gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008).Publisher
American Chemical Society (ACS)PubMed ID
33709688Additional Links
https://pubs.acs.org/doi/10.1021/acsami.1c01042ae974a485f413a2113503eed53cd6c53
10.1021/acsami.1c01042
Scopus Count
Except where otherwise noted, this item's license is described as This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.1c01042.
Related articles
- Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga<sub>2</sub>O<sub>3</sub> van der Waals Heterojunctions.
- Authors: Wang Y, Yang Z, Li H, Li S, Zhi Y, Yan Z, Huang X, Wei X, Tang W, Wu Z
- Issue date: 2020 Oct 21
- Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC.
- Authors: Ben Jabra Z, Abel M, Fabbri F, Aqua JN, Koudia M, Michon A, Castrucci P, Ronda A, Vach H, De Crescenzi M, Berbezier I
- Issue date: 2022 Mar 16
- Quasi-Epitaxial Growth of β-Ga<sub>2</sub>O<sub>3</sub>-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors.
- Authors: Tang X, Li KH, Zhao Y, Sui Y, Liang H, Liu Z, Liao CH, Babatain W, Lin R, Wang C, Lu Y, Alqatari FS, Mei Z, Tang W, Li X
- Issue date: 2022 Jan 12
- Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes.
- Authors: Qiao K, Liu Y, Kim C, Molnar RJ, Osadchy T, Li W, Sun X, Li H, Myers-Ward RL, Lee D, Subramanian S, Kim H, Lu K, Robinson JA, Kong W, Kim J
- Issue date: 2021 May 12
- Coincident-site lattice matching during van der Waals epitaxy.
- Authors: Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R
- Issue date: 2015 Dec 14