Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers
Kang, Chun Hong
Lee, Kwang Jae
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Embargo End Date2022-03-12
Permanent link to this recordhttp://hdl.handle.net/10754/668353
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AbstractEpitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga<sub>2</sub>O<sub>3</sub> nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga<sub>2</sub>O<sub>3</sub> direct-epitaxy on the EG. The β-Ga<sub>2</sub>O<sub>3</sub> layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.
CitationMin, J.-H., Li, K.-H., Kim, Y.-H., Min, J.-W., Kang, C. H., Kim, K.-H., … Ooi, B. S. (2021). Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. ACS Applied Materials & Interfaces. doi:10.1021/acsami.1c01042
SponsorsThe work was support by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. We acknowledge access to the KAUST Imaging and Characterization Core Lab for optical and electron microscopy measurements, and access to the Nanofabrication Core Lab for fabrication process of Ni stressor and devices. This work was also supported by Ceramic Strategic Research Program (KPP200001) through Korea Institute of Ceramic Engineering and Technology (KICET). J.-W.M., T.K.N., and B.S.O. gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008).
PublisherAmerican Chemical Society (ACS)
Except where otherwise noted, this item's license is described as This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.1c01042.
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