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dc.contributor.authorHolmes, Natalie P.
dc.contributor.authorElkington, Daniel C.
dc.contributor.authorBergin, Matthew
dc.contributor.authorGriffith, Matthew J.
dc.contributor.authorSharma, Anirudh
dc.contributor.authorFahy, Adam
dc.contributor.authorAndersson, Mats R.
dc.contributor.authorBelcher, Warwick
dc.contributor.authorRysz, Jakub
dc.contributor.authorDastoor, Paul C.
dc.date.accessioned2021-03-29T06:30:02Z
dc.date.available2021-03-29T06:30:02Z
dc.date.issued2021-03-12
dc.date.submitted2021-01-03
dc.identifier.citationHolmes, N. P., Elkington, D. C., Bergin, M., Griffith, M. J., Sharma, A., Fahy, A., … Dastoor, P. C. (2021). Temperature-Modulated Doping at Polymer Semiconductor Interfaces. ACS Applied Electronic Materials. doi:10.1021/acsaelm.1c00008
dc.identifier.issn2637-6113
dc.identifier.issn2637-6113
dc.identifier.doi10.1021/acsaelm.1c00008
dc.identifier.urihttp://hdl.handle.net/10754/668341
dc.description.abstractUnderstanding doping in polymer semiconductors has important implications for the development of organic electronic devices. This study reports a detailed investigation of the doping of the poly(3-hexylthiophene) (P3HT)/Nafion bilayer interfaces commonly used in organic biosensors. A combination of UV–visible spectroscopy, dynamic secondary ion mass spectrometry (d-SIMS), dynamic mechanical thermal analysis, and electrical device characterization reveals that the doping of P3HT increases with annealing temperature, and this increase is associated with thermally activated interdiffusion of the P3HT and Nafion. First-principles modeling of d-SIMS depth profiling data demonstrates that the diffusivity coefficient is a strong function of the molar concentration, resulting in a discrete intermixed region at the P3HT/Nafion interface that grows with increasing annealing temperature. Correlating the electrical conductance measurements with the diffusion model provides a detailed model for the temperature-modulated doping that occurs in P3HT/Nafion bilayers. Point-of-care testing has created a market for low-cost sensor technology, with printed organic electronic sensors well positioned to meet this demand, and this article constitutes a detailed study of the doping mechanism underlying such future platforms for the development of sensing technologies based on organic semiconductors.
dc.description.sponsorshipThis work was performed in part at the Materials Node (Newcastle) of the Australian National Fabrication Facility (ANFF), which is a company established under the National Collaborative Research Infrastructure Strategy to provide nano- and microfabrication facilities for Australia’s researchers. This research was supported by the Australian Research Council’s Discovery Projects funding scheme (project DP170102467). H. Andersson (Flinders University) is gratefully acknowledged for GPC measurements. E. Gomez (Penn State University) is gratefully acknowledged for helpful scientific discussion
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsaelm.1c00008
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsaelm.1c00008.
dc.titleTemperature-Modulated Doping at Polymer Semiconductor Interfaces
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Electronic Materials
dc.rights.embargodate2022-03-12
dc.eprint.versionPost-print
dc.contributor.institutionCentre for Organic Electronics, University of Newcastle, Callaghan, New South Wales 2308, Australia
dc.contributor.institutionAustralian Centre for Microscopy and Microanalysis, University of Sydney, Madsen Building F09, Sydney, New South Wales 2006, Australia
dc.contributor.institutionSchool of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, Sydney, New South Wales 2006, Australia
dc.contributor.institutionFlinders Institute for Nanoscale Science and Technology, Flinders University, Sturt Road, Bedford Park, Adelaide, South Australia 5042, Australia
dc.contributor.institutionInstitute of Physics, Jagiellonian University, Kraków 30-059, Poland
kaust.personSharma, Anirudh
dc.date.accepted2021-03-02
refterms.dateFOA2021-03-30T05:31:12Z
dc.date.published-online2021-03-12
dc.date.published-print2021-03-23


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