InGaN-based nanowires development for energy harvesting and conversion applications
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionElectrical and Computer Engineering
Electrical and Computer Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
KAUST Grant Number
BAS/1/ 1614-01-01Date
2021-03-28Submitted Date
2020-10-31Permanent link to this record
http://hdl.handle.net/10754/668295
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This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires. The Tutorial aims to shed light on the interfacial, surface, electrical, and photoelectrochemical characteristics of InGaN nanowires through nanoscale and ultrafast characterizations. Understanding the interrelated optical-physical properties proved critical in the development of renewable-energy harvesting and energy conversion devices. Benefiting from their unique aspect ratio and surface-to-volume ratio, semiconductor properties, and piezoelectric properties, the group-III-nitride nanowires, especially InGaN nanowires, are promising for clean energy conversion applications, including piezotronic/piezo-phototronic and solar-to-clean-fuel energy-conversion.Citation
Zhang, H., Min, J.-W., Gnanasekar, P., Ng, T. K., & Ooi, B. S. (2021). InGaN-based nanowires development for energy harvesting and conversion applications. Journal of Applied Physics, 129(12), 121103. doi:10.1063/5.0035685Sponsors
This work was supported by the King Abdullah University of Science and Technology (KAUST) baseline Funding No. BAS/1/ 1614-01-01. T.K.N., J.-W.M., and B.S.O. gratefully acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008.Publisher
AIP PublishingJournal
Journal of Applied PhysicsAdditional Links
https://aip.scitation.org/doi/10.1063/5.0035685ae974a485f413a2113503eed53cd6c53
10.1063/5.0035685
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