InGaN-based nanowires development for energy harvesting and conversion applications
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberBAS/1/ 1614-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/668295
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AbstractThis Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires. The Tutorial aims to shed light on the interfacial, surface, electrical, and photoelectrochemical characteristics of InGaN nanowires through nanoscale and ultrafast characterizations. Understanding the interrelated optical-physical properties proved critical in the development of renewable-energy harvesting and energy conversion devices. Benefiting from their unique aspect ratio and surface-to-volume ratio, semiconductor properties, and piezoelectric properties, the group-III-nitride nanowires, especially InGaN nanowires, are promising for clean energy conversion applications, including piezotronic/piezo-phototronic and solar-to-clean-fuel energy-conversion.
CitationZhang, H., Min, J.-W., Gnanasekar, P., Ng, T. K., & Ooi, B. S. (2021). InGaN-based nanowires development for energy harvesting and conversion applications. Journal of Applied Physics, 129(12), 121103. doi:10.1063/5.0035685
SponsorsThis work was supported by the King Abdullah University of Science and Technology (KAUST) baseline Funding No. BAS/1/ 1614-01-01. T.K.N., J.-W.M., and B.S.O. gratefully acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008.
JournalJournal of Applied Physics
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