Engineering Band-Type Alignment in CsPbBr 3 Perovskite-Based Artificial Multiple Quantum Wells
Merdad, Noor A.
El Demellawi, Jehad K.
Zhumekenov, Ayan A.
Hedhili, Mohamed N.
Gutierrez Arzaluz, Luis
Anjum, Dalaver H.
Ooi, Boon S.
Alshareef, Husam N.
Mohammed, Omar F.
KAUST DepartmentChemical Science Program
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Functional Nanomaterials Lab (FuNL)
Functional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
KAUST Catalysis Center (KCC)
KAUST Solar Center (KSC)
Material Science and Engineering
Material Science and Engineering Program
Photonics Lab King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia
Physical Science and Engineering (PSE) Division
Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
Online Publication Date2021-03-24
Print Publication Date2021-04
Embargo End Date2022-03-24
Permanent link to this recordhttp://hdl.handle.net/10754/668259
MetadataShow full item record
AbstractSemiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites—the leading class of emerging semiconductors—building a variety of bandgap alignments (i.e., band-types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite-based MQWs using 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), tris-(8-hydroxyquinoline)aluminum, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as quantum barrier materials are introduced. The structures of three different five-stacked perovskite-based MQWs each exhibiting a different band offset with CsPbBr3 in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type-I or type-II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type-I and type-II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type-II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide-perovskite-based quantum devices by bandgap engineering using simple quantum barrier considerations.
CitationLee, K. J., Merdad, N. A., Maity, P., El-Demellawi, J. K., Lui, Z., Sinatra, L., … Bakr, O. M. (2021). Engineering Band-Type Alignment in CsPbBr 3 Perovskite-Based Artificial Multiple Quantum Wells. Advanced Materials, 2005166. doi:10.1002/adma.202005166
SponsorsK.J.L. and N.A.M. contributed equally to this work. The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).