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dc.contributor.authorIshitani, Yoshihiro
dc.contributor.authorOki, Kensuke
dc.contributor.authorChizaki, Masaya
dc.contributor.authorOkamoto, Shungo
dc.contributor.authorNakayama, Tomoya
dc.contributor.authorLin, Bojin
dc.contributor.authorMa, Bei
dc.contributor.authorMorita, Ken
dc.contributor.authorMiyake, Hideto
dc.contributor.authorIida, Daisuke
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2021-03-14T07:31:57Z
dc.date.available2021-03-14T07:31:57Z
dc.date.issued2021-03-05
dc.identifier.citationIshitani, Y., Oki, K., Chizaki, M., Okamoto, S., Nakayama, T., Lin, B., … Ohkawa, K. (2021). Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis. Gallium Nitride Materials and Devices XVI. doi:10.1117/12.2576776
dc.identifier.isbn9781510642072
dc.identifier.isbn9781510642089
dc.identifier.doi10.1117/12.2576776
dc.identifier.urihttp://hdl.handle.net/10754/668105
dc.description.abstractLongitudinal optical (LO) phonon has strong electric interaction with particles and fields. Particularly, the interaction in III-nitrides is more significant than that in conventional III-V materials. We show phonon-exciton interaction properties in experimental PL spectrum analysis and theoretical calculation of population transfers of excitonic levels. Thermally nonequilibrium occupations of LO phonons and other modes generated by the LO-phonon decomposition are thought to shift the population distribution in principal quantum number states and kinetic energy to the higher energy side. The radiative exciton recombination lifetime is determined by the population distribution in the excitonic states, which is determined by the balance of the electronic and phononic elementary processes. The interaction of excitons and phonons releases the excess energy to the thermal bath of the lattice system, which sometimes yields negligible lattice temperature increase in the excited region or the nonequilibrium state between electron and phonon systems. A Raman scattering imaging measure is introduced to exhibit spatial transport of phonons generated by the energy relaxation and nonradiative recombination of the excited electrons and holes, where pump-probe measurements are enabled by the simultaneous irradiation of two laser beams. It is found that the phonon transport is blocked by the misfit dislocations located on a Ga0.84In0.16N/GaN heterointerface.
dc.description.sponsorshipThis study was partly supported by the Grant-in-Aid for Scientific Research of the Japan Society for the Promotion of Science (JP16H06415, JP16H06425, JP17H02772) and King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01)
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/11686/2576776/Analysis-of-LO-phonon-properties-in-III-nitrides--interaction/10.1117/12.2576776.full
dc.rightsArchived with thanks to SPIE
dc.titleAnalysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.conference.date6-12 MARCH 2021
dc.conference.namePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices X
dc.conference.locationOnline Only, California, United States
dc.eprint.versionPre-print
dc.contributor.institutionGraduate School of Electric and Electronic Engineering (Japan)
dc.contributor.institutionMie Univ. (Japan)
kaust.personIida, Daisuke
kaust.personOhkawa, Kazuhiro
kaust.grant.numberBAS/1/1676-01-01
refterms.dateFOA2021-03-14T07:33:11Z


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