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dc.contributor.authorLu, Yi
dc.contributor.authorWang, Chuanju
dc.contributor.authorOliveira, Victor Paiva De
dc.contributor.authorLiu, Zhiyuan
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2021-03-11T05:59:26Z
dc.date.available2021-03-11T05:59:26Z
dc.date.issued2021-03-10
dc.identifier.citationLu, Y., Wang, C., De Oliveira, V. P., Liu, Z., & Li, X. (2021). UV Light-emitting Diode with Buried Polarization-induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction. IEEE Photonics Technology Letters, 1–1. doi:10.1109/lpt.2021.3065095
dc.identifier.issn1941-0174
dc.identifier.doi10.1109/LPT.2021.3065095
dc.identifier.urihttp://hdl.handle.net/10754/668057
dc.description.abstractThe polarization-induced electric field in the III-nitride UV light-emitting diode (LED) allows for significant flexibility in device design to address the electron overflow and hole injection issues. The conventional AlGaN-based UV LED with the PIN structure suffers from insufficient carriers especially hole concentration due to the large valence band barrier for hole injection and p-type doping challenge. Our systematic study reveals that the inverse design of the n-type and p-type layer shall build an opposite polarization-induced field to suppress electron overflow as well as simultaneously enhance hole injection. To design this p-side down UV LED and improve the hole injection, we adopt the n-AlGaN/i-InGaN/p-AlGaN buried tunneling junction (BTJ) instead of the bottom p-layer. The tunneling probability and output power of the LED are further investigated by optimizing the composition and thickness of the InGaN layer. Simulation results show that the optimized 3 nm In0.3Ga0.7N tunneling layer could lead to several orders of magnitude enhancement for LED output power. This study is significant for the pursuit of highly efficient UV LEDs.
dc.description.sponsorshipThis work was supported by the KAUST Baseline BAS/1/1664-01-01, KAUST CRG URF/1/3437-01-01, GCC REP/1/3189-01-01, and National Natural Science Foundation of China (Grant No.61774065).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/9374487/
dc.relation.urlhttps://ieeexplore.ieee.org/document/9374487/
dc.relation.urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9374487
dc.rightsArchived with thanks to IEEE Photonics Technology Letters
dc.subjectAluminum gallium nitride
dc.subjectLight emitting diodes
dc.subjectBuried tunneling junction
dc.subjectUltraviolet sources
dc.subjectp-down LED
dc.titleUV Light-emitting Diode with Buried Polarization-induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalIEEE Photonics Technology Letters
dc.eprint.versionPost-print
kaust.personLu, Yi
kaust.personWang, Chuanju
kaust.personOliveira, Victor Paiva De
kaust.personLiu, Zhiyuan
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberCRG
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberURF/1/3437-01-01
refterms.dateFOA2021-03-11T06:46:29Z
kaust.acknowledged.supportUnitCRG
dc.date.published-online2021-03-10
dc.date.published-print2021-08-15


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