UV Light-emitting Diode with Buried Polarization-induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/668057
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AbstractThe polarization-induced electric field in the III-nitride UV light-emitting diode (LED) allows for significant flexibility in device design to address the electron overflow and hole injection issues. The conventional AlGaN-based UV LED with the PIN structure suffers from insufficient carriers especially hole concentration due to the large valence band barrier for hole injection and p-type doping challenge. Our systematic study reveals that the inverse design of the n-type and p-type layer shall build an opposite polarization-induced field to suppress electron overflow as well as simultaneously enhance hole injection. To design this p-side down UV LED and improve the hole injection, we adopt the n-AlGaN/i-InGaN/p-AlGaN buried tunneling junction (BTJ) instead of the bottom p-layer. The tunneling probability and output power of the LED are further investigated by optimizing the composition and thickness of the InGaN layer. Simulation results show that the optimized 3 nm In0.3Ga0.7N tunneling layer could lead to several orders of magnitude enhancement for LED output power. This study is significant for the pursuit of highly efficient UV LEDs.
CitationLu, Y., Wang, C., De Oliveira, V. P., Liu, Z., & Li, X. (2021). UV Light-emitting Diode with Buried Polarization-induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction. IEEE Photonics Technology Letters, 1–1. doi:10.1109/lpt.2021.3065095
SponsorsThis work was supported by the KAUST Baseline BAS/1/1664-01-01, KAUST CRG URF/1/3437-01-01, GCC REP/1/3189-01-01, and National Natural Science Foundation of China (Grant No.61774065).