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dc.contributor.authorCooley, Kayla A.
dc.contributor.authorAlsaadi, Rajeh
dc.contributor.authorGurunathan, Ramya L.
dc.contributor.authorDomask, Anna C.
dc.contributor.authorKerstetter, Lauren
dc.contributor.authorSaidi, Wissam A.
dc.contributor.authorMohney, Suzanne E.
dc.date.accessioned2021-03-10T13:42:27Z
dc.date.available2021-03-10T13:42:27Z
dc.date.issued2019-01
dc.identifier.citationCooley, K. A., Alsaadi, R., Gurunathan, R. L., Domask, A. C., Kerstetter, L., Saidi, W. A., & Mohney, S. E. (2019). Room-temperature epitaxy of metal thin films on tungsten diselenide. Journal of Crystal Growth, 505, 44–51. doi:10.1016/j.jcrysgro.2018.09.040
dc.identifier.issn0022-0248
dc.identifier.doi10.1016/j.jcrysgro.2018.09.040
dc.identifier.urihttp://hdl.handle.net/10754/668054
dc.description.abstractThe orientation of selected metals (Pd, Ni, Al, and Co) deposited on WSe2 by physical vapor deposition was examined using transmission electron microscopy and selected area electron diffraction. We discovered that Ni demonstrates room-temperature epitaxy, similarly to other face centered cubic (FCC) metals Au, Ag, and Cu. These epitaxial metals exhibit the following orientation relationship, where M stands for metal: M (111) || WSe2 (0001); M [22¯0] || WSe2 [112¯0]. Hexagonally close-packed Co, and FCC Pd and Al, were not epitaxial on deposition; however, Pd became epitaxial after annealing at 673 K for 5 h. To uncover critical variables for epitaxial growth, we correlated our experimental work and reports from the literature on Cu, Ag, and Au with density functional theory calculations of the energetics of metal atoms on the surface of WSe2 and thermodynamic calculations of metal-W-Se phase equilibria. Furthermore, we compared the findings to our previous work on metal/MoS2 systems to draw conclusions more generally applicable to epitaxial growth of metals on transition metal dichalcogenides (TMDs). We observed that epitaxy of metals on TMDs can occur when there is a match in crystallographic symmetry, even with a large lattice mismatch, and it is favored by metals exhibiting a low diffusion barrier on the TMD surface. However, reaction processes between the metal and WSe2 can prevent epitaxy even when the other factors are favorable, as occurred for Al/WSe2 with the formation of aluminum selenide, tungsten aluminide, and elemental tungsten. Consideration of crystallographic symmetry, surface diffusion barriers, and reactivity can be used to predict room-temperature epitaxy in other metal/TMD systems.
dc.description.sponsorshipThe computational work is supported in part by the University of Pittsburgh Center for Research Computing through the resources provided.
dc.description.sponsorshipRajeh Alsaadi acknowledges King Abdullah University of Science and Technology (KAUST) for providing a scholarship that allowed him to contribute to this project.
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0022024818304652
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, [505, , (2019-01)] DOI: 10.1016/j.jcrysgro.2018.09.040 . © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleRoom-temperature epitaxy of metal thin films on tungsten diselenide
dc.typeArticle
dc.identifier.journalJournal of Crystal Growth
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16808, United States
dc.contributor.institutionDepartment of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA, 15261, United States
dc.identifier.volume505
dc.identifier.pages44-51
dc.identifier.eid2-s2.0-85054461544


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