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    Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

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    Type
    Article
    Authors
    Park, Mun-Do
    Min, Jung-Wook
    Lee, Jun-Yeob
    Park, Jeong-Hwan
    Choi, Soo-Young
    Lee, Dong-Seon
    KAUST Department
    Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
    Date
    2021-03-04
    Submitted Date
    2021-01-12
    Permanent link to this record
    http://hdl.handle.net/10754/668041
    
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    Abstract
    We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.
    Citation
    Park, M.-D., Min, J.-W., Lee, J.-Y., Park, J.-H., Choi, S.-Y., & Lee, D.-S. (2021). Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer. Optical Materials Express, 11(4), 955. doi:10.1364/ome.419734
    Sponsors
    This research was supported in part by the GIST Research Institute (GRI) and Samsung Electronics in 2021.
    Publisher
    The Optical Society
    Journal
    Optical Materials Express
    DOI
    10.1364/ome.419734
    Additional Links
    https://www.osapublishing.org/abstract.cfm?URI=ome-11-4-955
    ae974a485f413a2113503eed53cd6c53
    10.1364/ome.419734
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