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    Resistance of domain-wall states in half-metallic CrO2

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    Type
    Article
    Authors
    Chen, Wenzhe
    Qian, Lijuan
    Xiao, Gang
    Date
    2018-11-01
    Permanent link to this record
    http://hdl.handle.net/10754/668004
    
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    Abstract
    The half-metallic CrO2 with nearly 100% spin polarization is an ideal system to study magnetic domain-wall resistance, which differs from the resistance (or resistivity) inside a single domain. To experimentally measure the domain-wall resistance, we design and prepare a special CrO2 epitaxial nanostructure with an asymmetrical weak link to localize a domain wall, by using the techniques of chemical vapor deposition and selective-area growth. This structure provides a capability to generate and annihilate a domain wall near the weak link. By contrasting the resistance between a single-domain state and a domain-wall state, we observe a repeatable and reversible resistance jump, namely domain-wall resistance, in half-metallic CrO2. Using the Levy-Zhang model, we further obtain the spin asymmetry ratio ρ0↑/ρ0↓ between resistivities in the two spin channels. The ratio, 4256 ± 388 at 5.0 K, is much larger than that of conventional ferromagnetic metals, attesting to the half metallicity of CrO2.
    Citation
    Chen, W., Qian, L., & Xiao, G. (2018). Resistance of domain-wall states in half-metallic CrO2. Physical Review B, 98(17). doi:10.1103/physrevb.98.174402
    Sponsors
    We acknowledge the financial support by National Science Foundation through Grant No. DMR-1307056 and by research funding from King Abdullah University of Science and Technology (KAUST).
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review B
    DOI
    10.1103/physrevb.98.174402
    Additional Links
    https://link.aps.org/doi/10.1103/PhysRevB.98.174402
    ae974a485f413a2113503eed53cd6c53
    10.1103/physrevb.98.174402
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