Atomic Resolution Study of W-Doped VO2 Nanowires

Abstract

Metal-Insulator Transition (MIT) in VO2 has attracted attention of many theorists and experimentalists for more than fifty years since the discovery of the phenomena by Morin [1]. The distinctive aspects of this phenomena are structural phase transition, sharp resistivity and optical transparency changes by several order of magnitudes at ~ 340 K [2]. These distinctive properties have inspired many applications such as thermo/electrochromics, Mott transistors, memristors, thermal actuators, gas sensors, strain sensors and temperature sensors. Recent efforts focus on controlling of phase transition and domain structures in finite size VO2, which results in different material properties and play a critical role in device applications.