TMD FinFET with 4 nm thin body and back gate control for future low power technology
Sachid, Angada B.
Permanent link to this recordhttp://hdl.handle.net/10754/667952
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AbstractA 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.
CitationChen, M.-C., Li, K.-S., Li, L.-J., Lu, A.-Y., Li, M.-Y., Chang, Y.-H., … Hu, C. (2015). TMD FinFET with 4 nm thin body and back gate control for future low power technology. 2015 IEEE International Electron Devices Meeting (IEDM). doi:10.1109/iedm.2015.7409813
SponsorsThis work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program
Conference/Event name61st IEEE International Electron Devices Meeting, IEDM 2015