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dc.contributor.authorAftab, Sikandar
dc.contributor.authorSamiya, Ms
dc.contributor.authorLiao, Wugang
dc.contributor.authorIqbal, Muhammad Waqas
dc.contributor.authorIshfaq, Mavra
dc.contributor.authorRamachandraiah, Karna
dc.contributor.authorAjmal, Hafiz Muhammad Salman
dc.contributor.authorHaque, Hafiz Mansoor Ul
dc.contributor.authorYousuf, Saqlain
dc.contributor.authorAhmed, Zaheer
dc.contributor.authorUsman khan, Muhammad
dc.contributor.authorRehman, Atteq Ur
dc.contributor.authorIqbal, Muhammad Zahir
dc.date.accessioned2021-03-07T08:44:06Z
dc.date.available2021-03-07T08:44:06Z
dc.date.issued2021
dc.date.submitted2020-12-16
dc.identifier.citationAftab, S., Samiya, M., Liao, W., Iqbal, M. W., Ishfaq, M., Ramachandraiah, K., … Iqbal, M. Z. (2021). Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response. Journal of Materials Chemistry C. doi:10.1039/d0tc05894g
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/d0tc05894g
dc.identifier.urihttp://hdl.handle.net/10754/667921
dc.description.abstractNoble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://xlink.rsc.org/?DOI=D0TC05894G
dc.rightsArchived with thanks to Journal of Materials Chemistry C
dc.titleSwitching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Materials Chemistry C
dc.rights.embargodate2022-03-07
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Engineering Science
dc.contributor.institutionSimon Fraser University
dc.contributor.institutionBurnaby
dc.contributor.institutionCanada
dc.contributor.institutionDepartment of Civil and Environmental Engineering
dc.contributor.institution209 Neungdong-ro
dc.contributor.institutionGwangjin-gu
dc.contributor.institutionSouth Korea
dc.contributor.institutionCollege of Electronic and Information Engineering
dc.contributor.institutionShenzhen University
dc.contributor.institutionShenzhen 518060
dc.contributor.institutionPeople's Republic of China
dc.contributor.institutionDepartment of Physics
dc.contributor.institutionRiphah International University
dc.contributor.institutionLahore
dc.contributor.institutionPakistan
dc.contributor.institutionFaculty of Natural Sciences
dc.contributor.institutionThe University Of Lahore
dc.contributor.institution(Gujrat Campus)-50700
dc.contributor.institutionSchool of Life Sciences
dc.contributor.institutionSejong University
dc.contributor.institutionSeoul 05006
dc.contributor.institutionKorea
dc.contributor.institutionDivision of Electronics and Electrical Engineering
dc.contributor.institutionDongguk University
dc.contributor.institutionSeoul 100-715
dc.contributor.institutionDeparment of Physics
dc.contributor.institutionSungkyunkwan University
dc.contributor.institutionSuwon
dc.contributor.institutionDepartment of Biochemistry
dc.contributor.institutionUniversity of Agriculture
dc.contributor.institutionFaisalabad
dc.contributor.institutionDepartment of Electronics Science and Technology
dc.contributor.institutionHarbin Institute of Technology
dc.contributor.institutionHarbin 150080
dc.contributor.institutionChina
dc.contributor.institutionKingdom of Saudi Arabia
dc.contributor.institutionNanotechnology Research Laboratory
dc.contributor.institutionFaculty of Engineering Sciences
dc.contributor.institutionGIK Institute of Engineering Sciences and Technology
dc.contributor.institutionTopi 23640
kaust.personRehman, Atteq Ur
kaust.personRehman, Atteq Ur
dc.date.accepted2021-02-19


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