Epitaxial growth of a 2D transition metal dichalcogenide lateral heterojunction
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/667850
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AbstractTransition metal dichalcogenides (TMDs) have previously been recognized as a new class of semiconducting 2D layered materials.1, 2 TMDs—such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2)—thus open up new opportunities in semiconductor technology for the development of future 2D electronics and optoelectronics. Furthermore, monolayer TMDs feature a direct energy band gap, good carrier mobility, and excellent ‘on’/‘off’ current ratios when they are fabricated in field effect transistors. These are all advantageous properties for future low-power electronic and optoelectronic devices. To achieve additional applications of these materials in advanced circuits, however, it is necessary to develop a 2D p–n junction (i.e., the interface between a p-type and an n-type semiconductor).
CitationLi, L.-J., & Li, M.-Y. (2016). Epitaxial growth of a 2D transition metal dichalcogenide lateral heterojunction. SPIE Newsroom. doi:10.1117/2.1201604.006470
PublisherSPIE-Intl Soc Optical Eng