Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/667775
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AbstractThis chapter explores the characteristics of metalorganic chemical vapor deposition (MOCVD) and discusses possible future trends in the development and application of this epitaxial materials technology to future electronic and optoelectronic devices. It focuses on the needs of different III-nitride materials and devices as examples to describe the state-of-the-art and emerging MOCVD technologies. In addition, the chapter discusses MOCVD innovation for emerging related materials such as Ga2O3. The II-VI compound semiconductors discussed in the chapter are formed by the Group 12 elements Zn, Cd, and Hg, and the Group 16 elements S, Se, and Te. Extrapolating from the recent past, it is relatively easy to predict the continued expansion of MOCVD materials grown for both research and commercial applications. The chapter addresses some specific commercial device applications of MOCVD-grown materials.
CitationDetchprohm, T., Ryou, J. -H., Li, X., & Dupuis, R. D. (2019). Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors. Metalorganic Vapor Phase Epitaxy (MOVPE), 507–548. doi:10.1002/9781119313021.ch14