Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging
Roqan, Iman S.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Embargo End Date2022-02-25
Permanent link to this recordhttp://hdl.handle.net/10754/667711
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AbstractAlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.
CitationCui, M., Guo, W., Xu, H., Jiang, J., Chen, L., Mitra, S., … Ye, J. (2021). Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging. Physica Status Solidi (RRL) – Rapid Research Letters. doi:10.1002/pssr.202100035