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dc.contributor.authorKim, Hyunho
dc.contributor.authorNugraha, Mohamad Insan
dc.contributor.authorGuan, Xinwei
dc.contributor.authorWang,Zhenwei
dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorXu, Xiangming
dc.contributor.authorWu, Tao
dc.contributor.authorBaran, Derya
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2021-02-28T08:56:21Z
dc.date.available2021-02-28T08:56:21Z
dc.date.issued2021-02-26
dc.date.submitted2020-12-14
dc.identifier.citationKim, H., Nugraha, M. I., Guan, X., Wang, Z., Hota, M. K., Xu, X., … Alshareef, H. N. (2021). All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts. ACS Nano. doi:10.1021/acsnano.0c10471
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid33635642
dc.identifier.doi10.1021/acsnano.0c10471
dc.identifier.urihttp://hdl.handle.net/10754/667696
dc.description.abstractFully solution-processed, large-area, electrical double-layer transistors (EDLTs) are presented by employing lead sulfide (PbS) colloidal quantum dots (CQDs) as active channels and Ti3C2Tx MXene as electrical contacts (including gate, source, and drain). The MXene contacts are successfully patterned by standard photolithography and plasma-etch techniques and integrated with CQD films. The large surface area of CQD film channels is effectively gated by ionic gel, resulting in high performance EDLT devices. A large electron saturation mobility of 3.32 cm2 V-1 s-1 and current modulation of 1.87 × 104 operating at low driving gate voltage range of 1.25 V with negligible hysteresis are achieved. The relatively low work function of Ti3C2Tx MXene (4.42 eV) compared to vacuum-evaporated noble metals such as Au and Pt makes them a suitable contact material for n-type transport in iodide-capped PbS CQD films with a LUMO level of ∼4.14 eV. Moreover, we demonstrate that the negative surface charges of MXene enhance the accumulation of cations at lower gate bias, achieving a threshold voltage as low as 0.36 V. The current results suggest a promising potential of MXene electrical contacts by exploiting their negative surface charges.
dc.description.sponsorshipThe research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). M.I.N. and T.D.A acknowledge funding from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsnano.0c10471
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.0c10471.
dc.titleAll-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.rights.embargodate2022-02-26
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
kaust.personKim, Hyunho
kaust.personNugraha, Mohamad I.
kaust.personWang, Zhenwei
kaust.personHota, Mrinal Kanti
kaust.personXu, Xiangming
kaust.personBaran, Derya
kaust.personAnthopoulos, Thomas D.
kaust.personAlshareef, Husam N.
kaust.grant.numberOSR-2018-CARF/CCF-3079
dc.date.accepted2021-02-22
refterms.dateFOA2021-02-28T10:19:09Z
kaust.acknowledged.supportUnitCCF
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)
dc.date.published-online2021-02-26
dc.date.published-print2021-03-23


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