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    All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts

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    Name:
    revised Manuscript 28Feb2021 hna.pdf
    Size:
    1.577Mb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2022-02-26
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    Type
    Article
    Authors
    Kim, Hyunho cc
    Nugraha, Mohamad Insan cc
    Guan, Xinwei cc
    Wang,Zhenwei
    Hota, Mrinal Kanti cc
    Xu, Xiangming cc
    Wu, Tao cc
    Baran, Derya cc
    Anthopoulos, Thomas D. cc
    Alshareef, Husam N. cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    KAUST Solar Center (KSC), Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
    KAUST Solar Center (KSC)
    KAUST Grant Number
    OSR-2018-CARF/CCF-3079
    Date
    2021-02-26
    Embargo End Date
    2022-02-26
    Submitted Date
    2020-12-14
    Permanent link to this record
    http://hdl.handle.net/10754/667696
    
    Metadata
    Show full item record
    Abstract
    Fully solution-processed, large-area, electrical double-layer transistors (EDLTs) are presented by employing lead sulfide (PbS) colloidal quantum dots (CQDs) as active channels and Ti3C2Tx MXene as electrical contacts (including gate, source, and drain). The MXene contacts are successfully patterned by standard photolithography and plasma-etch techniques and integrated with CQD films. The large surface area of CQD film channels is effectively gated by ionic gel, resulting in high performance EDLT devices. A large electron saturation mobility of 3.32 cm2 V-1 s-1 and current modulation of 1.87 × 104 operating at low driving gate voltage range of 1.25 V with negligible hysteresis are achieved. The relatively low work function of Ti3C2Tx MXene (4.42 eV) compared to vacuum-evaporated noble metals such as Au and Pt makes them a suitable contact material for n-type transport in iodide-capped PbS CQD films with a LUMO level of ∼4.14 eV. Moreover, we demonstrate that the negative surface charges of MXene enhance the accumulation of cations at lower gate bias, achieving a threshold voltage as low as 0.36 V. The current results suggest a promising potential of MXene electrical contacts by exploiting their negative surface charges.
    Citation
    Kim, H., Nugraha, M. I., Guan, X., Wang, Z., Hota, M. K., Xu, X., … Alshareef, H. N. (2021). All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts. ACS Nano. doi:10.1021/acsnano.0c10471
    Sponsors
    The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). M.I.N. and T.D.A acknowledge funding from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Nano
    DOI
    10.1021/acsnano.0c10471
    PubMed ID
    33635642
    Additional Links
    https://pubs.acs.org/doi/10.1021/acsnano.0c10471
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsnano.0c10471
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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