The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
Type
ArticleAuthors
Knobloch, Theresia
Illarionov, Yury Yu.

Ducry, Fabian

Schleich, Christian

Wachter, Stefan

Watanabe, Kenji

Taniguchi, Takashi

Mueller, Thomas

Waltl, Michael

Lanza, Mario

Vexler, Mikhail I.
Luisier, Mathieu

Grasser, Tibor

KAUST Department
Physical Science and Engineering (PSE) DivisionDate
2021-02-23Online Publication Date
2021-02-23Print Publication Date
2021-02Embargo End Date
2021-08-23Submitted Date
2020-07-31Permanent link to this record
http://hdl.handle.net/10754/667622
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Show full item recordAbstract
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling limits place extreme demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, such as transition metal dichalcogenides or black phosphorus. The requirements for gate insulators are arguably even more challenging. At present, hexagonal boron nitride (hBN) is the most common 2D insulator and is widely considered to be the most promising gate insulator in 2D material-based transistors. Here we assess the material parameters and performance limits of hBN. We compare experimental and theoretical tunnel currents through ultrathin layers (equivalent oxide thickness of less than 1 nm) of hBN and other 2D gate insulators, including the ideal case of defect-free hBN. Though its properties make hBN a candidate for many applications in 2D nanoelectronics, excessive leakage currents lead us to conclude that hBN is unlikely to be suitable for use as a gate insulator in ultrascaled CMOS devices.Citation
Knobloch, T., Illarionov, Y. Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., … Grasser, T. (2021). The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nature Electronics, 4(2), 98–108. doi:10.1038/s41928-020-00529-xPublisher
Springer NatureJournal
Nature ElectronicsAdditional Links
http://www.nature.com/articles/s41928-020-00529-xae974a485f413a2113503eed53cd6c53
10.1038/s41928-020-00529-x