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    The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

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    full_paper_v30_orig.pdf
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    Type
    Article
    Authors
    Knobloch, Theresia cc
    Illarionov, Yury Yu. cc
    Ducry, Fabian cc
    Schleich, Christian cc
    Wachter, Stefan cc
    Watanabe, Kenji cc
    Taniguchi, Takashi cc
    Mueller, Thomas cc
    Waltl, Michael cc
    Lanza, Mario cc
    Vexler, Mikhail I.
    Luisier, Mathieu cc
    Grasser, Tibor cc
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2021-02-23
    Online Publication Date
    2021-02-23
    Print Publication Date
    2021-02
    Embargo End Date
    2021-08-23
    Submitted Date
    2020-07-31
    Permanent link to this record
    http://hdl.handle.net/10754/667622
    
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    Abstract
    Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling limits place extreme demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, such as transition metal dichalcogenides or black phosphorus. The requirements for gate insulators are arguably even more challenging. At present, hexagonal boron nitride (hBN) is the most common 2D insulator and is widely considered to be the most promising gate insulator in 2D material-based transistors. Here we assess the material parameters and performance limits of hBN. We compare experimental and theoretical tunnel currents through ultrathin layers (equivalent oxide thickness of less than 1 nm) of hBN and other 2D gate insulators, including the ideal case of defect-free hBN. Though its properties make hBN a candidate for many applications in 2D nanoelectronics, excessive leakage currents lead us to conclude that hBN is unlikely to be suitable for use as a gate insulator in ultrascaled CMOS devices.
    Citation
    Knobloch, T., Illarionov, Y. Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., … Grasser, T. (2021). The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nature Electronics, 4(2), 98–108. doi:10.1038/s41928-020-00529-x
    Publisher
    Springer Nature
    Journal
    Nature Electronics
    DOI
    10.1038/s41928-020-00529-x
    Additional Links
    http://www.nature.com/articles/s41928-020-00529-x
    ae974a485f413a2113503eed53cd6c53
    10.1038/s41928-020-00529-x
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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