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    Uncovering Atomic and Nano-scale Deformations in Two-dimensional Lateral Heterojunctions

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    Type
    Article
    Authors
    Han, Yimo
    Muller, David
    Xie, Saien
    Park, Jiwoong
    Li, Ming-yang
    Li, Lain-Jong
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2020-07-30
    Embargo End Date
    2021-01-30
    Permanent link to this record
    http://hdl.handle.net/10754/667600
    
    Metadata
    Show full item record
    Abstract
    Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable deformations including strain, dislocations, or wrinkles, which can strongly affect their mechanical, optical, and electronic properties. Transmission electron microscopy (TEM) and its related techniques have become indispensable tools in uncovering the structure and subsequent physical properties in these 2D materials, atom-by-atom. Here, we utilized a combination of atomic-resolution ADF-STEM and four-dimensional (4D) STEM mapping techniques to address how different 2D materials merge to form lateral heterostructures, specifically between two distinct transition metal dichalcogenides (TMDs) at various scales (Fig. 1).
    Citation
    Han, Y., Muller, D., Xie, S., Park, J., Li, M.-Y., & Li, L.-J. (2020). Uncovering Atomic and Nano-scale Deformations in Two-dimensional Lateral Heterojunctions. Microscopy and Microanalysis, 26(S2), 1630–1631. doi:10.1017/s1431927620018784
    Publisher
    Cambridge University Press (CUP)
    Journal
    Microscopy and Microanalysis
    DOI
    10.1017/s1431927620018784
    Additional Links
    https://www.cambridge.org/core/product/identifier/S1431927620018784/type/journal_article
    ae974a485f413a2113503eed53cd6c53
    10.1017/s1431927620018784
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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