Uncovering Atomic and Nano-scale Deformations in Two-dimensional Lateral Heterojunctions
Type
ArticleKAUST Department
Physical Science and Engineering (PSE) DivisionDate
2020-07-30Embargo End Date
2021-01-30Permanent link to this record
http://hdl.handle.net/10754/667600
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Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable deformations including strain, dislocations, or wrinkles, which can strongly affect their mechanical, optical, and electronic properties. Transmission electron microscopy (TEM) and its related techniques have become indispensable tools in uncovering the structure and subsequent physical properties in these 2D materials, atom-by-atom. Here, we utilized a combination of atomic-resolution ADF-STEM and four-dimensional (4D) STEM mapping techniques to address how different 2D materials merge to form lateral heterostructures, specifically between two distinct transition metal dichalcogenides (TMDs) at various scales (Fig. 1).Citation
Han, Y., Muller, D., Xie, S., Park, J., Li, M.-Y., & Li, L.-J. (2020). Uncovering Atomic and Nano-scale Deformations in Two-dimensional Lateral Heterojunctions. Microscopy and Microanalysis, 26(S2), 1630–1631. doi:10.1017/s1431927620018784Publisher
Cambridge University Press (CUP)Journal
Microscopy and MicroanalysisAdditional Links
https://www.cambridge.org/core/product/identifier/S1431927620018784/type/journal_articleae974a485f413a2113503eed53cd6c53
10.1017/s1431927620018784