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dc.contributor.authorFang, Feier
dc.contributor.authorLi, Henan
dc.contributor.authorFang, Shaofan
dc.contributor.authorZhou, Bo
dc.contributor.authorHuang, Fu
dc.contributor.authorMa, Chun
dc.contributor.authorWan, Yi
dc.contributor.authorJiang, Shangchi
dc.contributor.authorWang, Ye
dc.contributor.authorTian, Bingbing
dc.contributor.authorShi, Yumeng
dc.date.accessioned2021-02-21T10:56:11Z
dc.date.available2021-02-21T10:56:11Z
dc.date.issued2021-02-16
dc.date.submitted2020-11-09
dc.identifier.citationFang, F., Li, H., Fang, S., Zhou, B., Huang, F., Ma, C., … Shi, Y. (2021). 2D Cs 2 AgBiBr 6 with Boosted Light–Matter Interaction for High-Performance Photodetectors. Advanced Optical Materials, 2001930. doi:10.1002/adom.202001930
dc.identifier.issn2195-1071
dc.identifier.issn2195-1071
dc.identifier.doi10.1002/adom.202001930
dc.identifier.urihttp://hdl.handle.net/10754/667521
dc.description.abstractLead-free double perovskite Cs2AgBiBr6 has attracted significant research interests for optoelectronic applications because of its nontoxicity, inherent stability, and high detection sensitivity. In this work, the 2D Cs2AgBiBr6 with a thickness of ≈5 nm and lateral length larger than 50 µm is successfully fabricated by a space-confined method. The fabricated ultra-thin 2D Cs2AgBiBr6 exhibits significant advantages on photodetection, due to its enhanced light–matter interaction. Remarkably, compared with bulk Cs2AgBiBr6, 2D Cs2AgBiBr6-based photodetectors exhibit dramatically improved optoelectronic properties including ultra-high detectivity (D*) of 7.4 × 1014 Jones (more than ten times), photoresponsivity (R) of 54.6 A W−1 (exceeding 4.7 times), an on/off ratio of 7.4 × 104 (more than ten times), and a fast response time of ≈1.7 ms (exceeding 30 times). In addition, due to the strong photon recycling effect of Cs2AgBiBr6, optical properties in both light absorption and emission can be effectively engineered by the material thickness, which enables a tunable wavelength-dependent photodetection. The results provide further insights on the light–matter interaction of environmentally friendly 2D perovskites related materials and shine light on their high-performance optoelectrical applications.
dc.description.sponsorshipY.S. acknowledges the support from the National Natural Science Foundation of China (grant no. 61874074), Science and Technology Project of Shenzhen (JCYJ20170817101100705), and the (Key) Project of Department of Education of Guangdong Province (grant no. 2016KZDXM008). H.L. acknowledges the support from Natural Science Foundation of SZU (grant no. 2017011) and the support from Science and Technology Project of Shenzhen (JCYJ20170817100111548). This project was supported by Shenzhen Peacock Plan (grant no. KQTD2016053112042971) and the postgraduate innovation development fund project of Shenzhen University (grant no. 315-0000470527).
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adom.202001930
dc.rightsArchived with thanks to Advanced Optical Materials
dc.title2D Cs 2 AgBiBr 6 with Boosted Light–Matter Interaction for High-Performance Photodetectors
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Optical Materials
dc.rights.embargodate2022-02-16
dc.eprint.versionPost-print
dc.contributor.institutionInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China
dc.contributor.institutionInstitute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China
dc.contributor.institutionUniversity of Strasbourg, CNRS ISIS UMR 7006 8 Alleé Gaspard Monge Strasbourg F-67000 France
dc.contributor.institutionTechnology Development Center Metatest Optoelectronic CO., LTD. Nanjing Jiangsu 215000 China
dc.contributor.institutionKey Laboratory of Material Physics of Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 China
dc.identifier.pages2001930
kaust.personWan, Yi
dc.date.accepted2021-01-12


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