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dc.contributor.authorZheng, Dongxing
dc.contributor.authorFang, Yue-Wen
dc.contributor.authorZhang, Senfu
dc.contributor.authorLi, Peng
dc.contributor.authorWen, Yan
dc.contributor.authorFang, Bin
dc.contributor.authorHe, Xin
dc.contributor.authorLi, Yan
dc.contributor.authorZhang, Chenhui
dc.contributor.authorTong, Wenyi
dc.contributor.authorMi, Wenbo
dc.contributor.authorBai, Haili
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorQiu, Z. Q.
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2021-02-21T08:32:59Z
dc.date.available2021-02-21T08:32:59Z
dc.date.issued2021-02-19
dc.date.submitted2020-12-06
dc.identifier.citationZheng, D., Fang, Y.-W., Zhang, S., Li, P., Wen, Y., Fang, B., … Zhang, X. (2021). Berry Phase Engineering in SrRuO3/SrIrO3/SrTiO3 Superlattices Induced by Band Structure Reconstruction. ACS Nano. doi:10.1021/acsnano.0c10200
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid33606942
dc.identifier.doi10.1021/acsnano.0c10200
dc.identifier.urihttp://hdl.handle.net/10754/667517
dc.description.abstractThe Berry phase, which reveals the intimate geometrical structure underlying quantum mechanics, plays a central role in the anomalous Hall effect. In this work, we observed a sign change of Berry curvatures at the interface between the ferromagnet SrRuO3 (SRO) layer and the SrIrO3 (SIO) layer with strong spin-orbit coupling. The negative Berry curvature at the interface, induced by the strongly spin-orbit-coupled Ir 5d bands near the Fermi level, makes the SRO/SIO interface different from the SRO layer that has a positive Berry curvature. These opposite Berry curvatures led to two anomalous Hall effect (AHE) channels with opposite signs at the SRO/SIO interface and in the SRO layer, respectively, resulting in a hump-like feature in the Hall resistivity loop. This observation offers a straightforward explanation of the hump-like feature that is usually associated with the chiral magnetic structure or magnetic skyrmions. Hence, this study provides evidence to oppose the widely accepted claim that magnetic skyrmions induce the hump-like feature.
dc.description.sponsorshipThis publication is based on research supported by the King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR), under award Nos. OSR2019-CRG8-4801, OSR-2017-CRG6-3427, and CRF-2015-SENSORS-2708. D.X.Z and H.L.B. acknowledge financial support from the National Natural Science Foundation of China (11704278, 51772207, and 11434006) and Natural Science Foundation of Tianjin City (19JCQNJC03000). Z.Q.Q. acknowledges financial support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-05CH11231 (van der Waals heterostructures program, KCWF16). Computational resources were provided by the New York University Shanghai.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsnano.0c10200
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.0c10200.
dc.titleBerry Phase Engineering in SrRuO3/SrIrO3/SrTiO3 Superlattices Induced by Band Structure Reconstruction
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.rights.embargodate2022-02-19
dc.eprint.versionPost-print
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China
dc.contributor.institutionLaboratory for Materials and Structures & Tokyo Tech World Research Hub Initiative (WRHI), Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
dc.contributor.institutionNYU-ECNU Institute of Physics, New York University Shanghai, Shanghai 200122, China
dc.contributor.institutionTheoretical Materials Physics, Q-MAT, CESAM, Université de Liège, B-4000 Liège, Belgium
dc.contributor.institutionDepartment of Physics, University of California at Berkeley, Berkeley, California 94720, United States
kaust.personZheng, Dongxing
kaust.personZhang, Senfu
kaust.personLi, Peng
kaust.personWen, Yan
kaust.personFang, Bin
kaust.personHe, Xin
kaust.personLi, Yan
kaust.personZhang, Chenhui
kaust.personAlshareef, Husam N.
kaust.personZhang, Xixiang
kaust.grant.numberCRF-2015-SENSORS-2708
kaust.grant.numberOSR-2017-CRG6-3427
kaust.grant.numberOSR2019-CRG8-4801
dc.date.accepted2021-02-17
refterms.dateFOA2021-02-21T08:47:49Z
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)


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