Berry Phase Engineering in SrRuO3/SrIrO3/SrTiO3 Superlattices Induced by Band Structure Reconstruction
Alshareef, Husam N.
Qiu, Z. Q.
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2021-02-19
Print Publication Date2021-03-23
Embargo End Date2022-02-19
Permanent link to this recordhttp://hdl.handle.net/10754/667517
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AbstractThe Berry phase, which reveals the intimate geometrical structure underlying quantum mechanics, plays a central role in the anomalous Hall effect. In this work, we observed a sign change of Berry curvatures at the interface between the ferromagnet SrRuO3 (SRO) layer and the SrIrO3 (SIO) layer with strong spin-orbit coupling. The negative Berry curvature at the interface, induced by the strongly spin-orbit-coupled Ir 5d bands near the Fermi level, makes the SRO/SIO interface different from the SRO layer that has a positive Berry curvature. These opposite Berry curvatures led to two anomalous Hall effect (AHE) channels with opposite signs at the SRO/SIO interface and in the SRO layer, respectively, resulting in a hump-like feature in the Hall resistivity loop. This observation offers a straightforward explanation of the hump-like feature that is usually associated with the chiral magnetic structure or magnetic skyrmions. Hence, this study provides evidence to oppose the widely accepted claim that magnetic skyrmions induce the hump-like feature.
CitationZheng, D., Fang, Y.-W., Zhang, S., Li, P., Wen, Y., Fang, B., … Zhang, X. (2021). Berry Phase Engineering in SrRuO3/SrIrO3/SrTiO3 Superlattices Induced by Band Structure Reconstruction. ACS Nano. doi:10.1021/acsnano.0c10200
SponsorsThis publication is based on research supported by the King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR), under award Nos. OSR2019-CRG8-4801, OSR-2017-CRG6-3427, and CRF-2015-SENSORS-2708. D.X.Z and H.L.B. acknowledge financial support from the National Natural Science Foundation of China (11704278, 51772207, and 11434006) and Natural Science Foundation of Tianjin City (19JCQNJC03000). Z.Q.Q. acknowledges financial support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-05CH11231 (van der Waals heterostructures program, KCWF16). Computational resources were provided by the New York University Shanghai.
PublisherAmerican Chemical Society (ACS)
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