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dc.contributor.authorAggarwal, Neha
dc.contributor.authorKrishna, Shibin
dc.contributor.authorGoswami, Lalit
dc.contributor.authorJain, Shubhendra Kumar
dc.contributor.authorPandey, Akhilesh
dc.contributor.authorGundimeda, Abhiram
dc.contributor.authorVashishtha, Pargam
dc.contributor.authorSingh, Jasveer
dc.contributor.authorSingh, Sandeep
dc.contributor.authorGupta, Govind
dc.date.accessioned2021-02-21T06:02:21Z
dc.date.available2021-02-21T06:02:21Z
dc.date.issued2021-02-08
dc.date.submitted2020-11-12
dc.identifier.citationAggarwal, N., Krishna, S., Goswami, L., Jain, S. K., Pandey, A., Gundimeda, A., … Gupta, G. (2021). Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer. SN Applied Sciences, 3(3). doi:10.1007/s42452-021-04274-4
dc.identifier.issn2523-3971
dc.identifier.doi10.1007/s42452-021-04274-4
dc.identifier.urihttp://hdl.handle.net/10754/667510
dc.description.abstractWe have investigated the impact of AlN buffer layer growth parameters for developing highly single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for compound formation are amongst the major causes that affects the growth quality of AlGaN films. Thus, proper optimization need to be carried out for achieving high quality AlGaN due to an augmented tendency of defect generation compared to GaN films. Thus, growth conditions need to be amended to maximize the incorporation ability of adatoms and minimize defect density. So, this study elaborates the growth optimization of AlGaN/AlN/Si (111) heterostructure with varied AlN buffer growth temperature (760 to 800 °C). It was observed that the remnant Al in low temperature growth of AlN buffer layer resist the growth quality of AlGaN epitaxial films. A highly single crystalline AlGaN film with comparatively lowest rocking curve FWHM value (~ 0.61°) and smooth surface morphology with least surface defect states was witnessed when AlN buffer was grown at 780 °C. From the Vegard’s law, the photoluminescence analysis unveils Aluminium composition of 31.5% with significantly reduced defect band/NBE band ratio to 0.3. The study demonstrates good crystalline quality AlGaN film growth with Aluminium content variation between ~ 30–39% in AlGaN/AlN heterostructure on Si(111) substrate leading to a bandgap range which is suitable for next-generation solar-blind photodetection applications.
dc.description.sponsorshipWe gratefully acknowledge Director, CSIR-NPL, New Delhi, for his encouragement and support. Neha would like to acknowledge CSIR for providing financial assistance via CSIR-Research Associateship.
dc.publisherSpringer Science and Business Media LLC
dc.relation.urlhttp://link.springer.com/10.1007/s42452-021-04274-4
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.titleInvestigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia
dc.identifier.journalSN Applied Sciences
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCSIR-National Physical Laboratory (NPL), Dr. K. S. Krishnan Marg, New Delhi, 110012, India
dc.contributor.institutionAcademy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad, Uttar Pradesh, 201002, India
dc.contributor.institutionFunctional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, Melbourne, VIC, 3000, Australia
dc.contributor.institutionSolid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi, 110054, India
dc.contributor.institutionDepartment of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK
dc.identifier.volume3
dc.identifier.issue3
kaust.personKrishna, Shibin
dc.date.accepted2021-01-25
dc.identifier.eid2-s2.0-85100666763
refterms.dateFOA2021-02-21T06:03:09Z


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This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.