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dc.contributor.authorXue, Fei
dc.contributor.authorHe, Xin
dc.contributor.authorPeriyanagounder, Dharmaraj
dc.contributor.authorJi, Zhigang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2021-02-17T08:56:16Z
dc.date.available2021-02-17T08:56:16Z
dc.date.issued2021
dc.identifier.citationXue, F., He, X., Periyanagounder, D., Ji, Z., Li, L.-J., He, J.-H., & Zhang, X. (2021). Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures. IEEE Transactions on Electron Devices, 1–4. doi:10.1109/ted.2021.3059976
dc.identifier.doi10.1109/TED.2021.3059976
dc.identifier.urihttp://hdl.handle.net/10754/667493
dc.description.abstractWe report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
dc.description.sponsorshipThe work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsArchived with thanks to IEEE Transactions on Electron Devices. Usage subject to IEEE terms and conditions.
dc.titleOptically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalAccepted by IEEE Transactions on Electron Devices
dc.eprint.versionPost-print
dc.contributor.institutionNational Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China.
dc.contributor.institutionDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
pubs.publication-statusAccepted
kaust.personXue, Fei
kaust.personHe, Xin
kaust.personPeriyanagounder, Dharmaraj
kaust.personLi, Lain-Jong
kaust.personZhang, Xixiang
kaust.grant.numberORS-2016-CRG5-2996
dc.date.accepted2021-02-15
refterms.dateFOA2021-02-17T08:56:16Z


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