Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
KAUST Grant NumberORS-2016-CRG5-2996
Permanent link to this recordhttp://hdl.handle.net/10754/667493
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AbstractWe report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
CitationXue, F., He, X., Periyanagounder, D., Ji, Z., Li, L.-J., He, J.-H., & Zhang, X. (2021). Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices With Simplified Structures. IEEE Transactions on Electron Devices, 1–4. doi:10.1109/ted.2021.3059976
SponsorsThe work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.