Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Material Science and Engineering
KAUST Solar Center (KSC)
KAUST Grant NumberOSR-CRGURF/1/3383
Embargo End Date2022-02-16
Permanent link to this recordhttp://hdl.handle.net/10754/667474
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AbstractIn this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline silicon (c-Si) wafers that feature SiO2/poly-Si layers; the doping process is then activated by thermal annealing at high temperatures in a nitrogen atmosphere. With optimized n- and p-type solution doping and thermal annealing, n- and p-type poly-Si passivating contacts featuring simultaneously a low contact recombination parameter (J0c) of 2.4 and 12 fA/cm2 and a low contact resistivity (ρc) of 29 and 20 mΩ·cm2 are achieved, respectively. Taking advantage of the single-sided nature of these solution-doping processes, c-Si solar cells with poly-Si passivating contacts of opposite polarity on the respective wafer surfaces are fabricated using a simple coannealing process, achieving the best power conversion efficiency (PCE) of 18.5% on a planar substrate. Overall, the solution-doping method is demonstrated to be a simple and promising alternative to gas/ion implantation doping for poly-Si passivating-contact manufacturing.
CitationYang, X., Kang, J., Liu, W., Zhang, X., & De Wolf, S. (2021). Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c22127
SponsorsThis work was financially supported by the King Abdullah University of Science & Technology (KAUST) through the Competitive Research Grant under award no. OSR-CRGURF/1/3383 and the start-up funding from the Soochow University.
PublisherAmerican Chemical Society (ACS)