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    Reversible and stable doping technique to invert the carrier polarity of MoTe2

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    Name:
    Reversible_Aftab+et+al_2021_Nanotechnology_10.1088_1361-6528_abe2cb.pdf
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    662.3Kb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2022-02-03
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    Type
    Article
    Authors
    Aftab, Sikandar cc
    Ms, Samiya
    Raza, Ali
    Iqbal, Muhammad Waqas cc
    Haq, Hafiz Mansoor Ul
    Ramachandraiah, Karna
    Yousuf, Saqlain
    Jun, Seong Chan cc
    Rehman, Atteq Ur
    Iqbal, Muhammad Zahir cc
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2021-02-03
    Embargo End Date
    2022-02-03
    Submitted Date
    2019-10-04
    Permanent link to this record
    http://hdl.handle.net/10754/667312
    
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    Abstract
    The 2D materials can be implemented in several functional devices for future optoelectronics and electronics applications. Remarkably, recent research on p-n diodes by stacking two-dimensional (2D) materials in heterostructures or homostructures (out of plane) has been studied extensively with novel designs that are impossible with conventional bulk semiconductor materials. However, the insight of a lateral p-n diode through a single nanoflake based on 2D material needs attention for facilitating the miniaturization of device architectures with efficient performance. Here, we have established a physical carrier type inversion technique to invert the polarity of MoTe2-based FETs with deep ultraviolet (DUV) doping in (oxygen) O2 and (nitrogen) N2 gas environments. A p-type MoTe2 nanoflake is transformed its polarity to n-type one when irradiated under DUV illumination in an N2 gaseous atmosphere and its returned to original one once irradiated in O2 gaseous environs. Further, Kelvin probe force microscopy (KPFM) measurements were employed to support our consequences where the value work function changed from ~ 4.8 and ~ 4.5 eV when p-type MoTe2 was inverted to n-type one, respectively. Also, using this approach, an in-plane homogeneous p-n junction was formed and achieved a diode rectifying ratio (If/Ir) up to ~3.8 × 104. This effective approach for carrier-type inversion may play an important role to advance the functional devices.
    Citation
    Aftab, S., Ms, S., Raza, A., Iqbal, M. W., Haq, H. M. U., Ramachandraiah, K., … Iqbal, M. Z. (2021). Reversible and stable doping technique to invert the carrier polarity of MoTe2. Nanotechnology. doi:10.1088/1361-6528/abe2cb
    Publisher
    IOP Publishing
    Journal
    Nanotechnology
    DOI
    10.1088/1361-6528/abe2cb
    PubMed ID
    33535197
    Additional Links
    https://iopscience.iop.org/article/10.1088/1361-6528/abe2cb
    ae974a485f413a2113503eed53cd6c53
    10.1088/1361-6528/abe2cb
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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