A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor
Type
ArticleAuthors
Yuvaraja, Saravanan
Bhyranalyar, Veerabhadraswamy Nagarajappa
Bhat, Sachin Ashok
Surya, Sandeep Goud
Yelamaggad, Channabasaveshwar Veerappa
Salama, Khaled N.
KAUST Department
Electrical EngineeringComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Date
2021Submitted Date
2020-09-01Permanent link to this record
http://hdl.handle.net/10754/667247Metadata
Show full item recordAbstract
The proposed H$_{2}$S gas sensor is a novel heterojunction combination that can readily absorb toxic gases, changing the channel resistance of the device. The OFET device is a highly stable and selective tool that can help in taking preventive measures.Citation
Yuvaraja, S., Bhyranalyar, V. N., Bhat, S. A., Surya, S. G., Yelamaggad, C. V., & Salama, K. N. (2021). A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor. Materials Horizons. doi:10.1039/d0mh01420fSponsors
We acknowledge the financial support of King Abdullah University of Science and Technology (KAUST), Saudi Arabia. SGS and KNS acknowledge the Center Collaborative Fund of the Advanced Membranes and Porous Materials Center at KAUST. CVY sincerely expresses his gratitude to SERB, Department of Science and Technology, Government of India for providing financial support under a research project no. EMR/2017/000153.Publisher
Royal Society of Chemistry (RSC)Journal
Materials HorizonsAdditional Links
http://xlink.rsc.org/?DOI=D0MH01420FScopus Count
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