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dc.contributor.authorLiao, Che-Hao
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorTorres Castanedo, Carlos Gerardo
dc.contributor.authorZhang, Guozheng
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2021-01-20T07:35:19Z
dc.date.available2021-01-20T07:35:19Z
dc.date.issued2021-01-18
dc.date.submitted2020-08-27
dc.identifier.citationLiao, C.-H., Li, K.-H., Torres-Castanedo, C. G., Zhang, G., & Li, X. (2021). Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing. Applied Physics Letters, 118(3), 032103. doi:10.1063/5.0027067
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/5.0027067
dc.identifier.urihttp://hdl.handle.net/10754/666944
dc.description.abstractWe have demonstrated wide bandgap and composition range b-(AlxGa1x)2O3 thin films by employing thermal annealing of b-Ga2O3/ sapphire templates. With proper annealing conditions at 1000–1500 C, the b-Ga2O3 thin films transformed to the b-(AlxGa1x)2O3 thin films with different bandgaps and compositions due to the Al diffusion from sapphire. Meanwhile, the Ga atoms diffused into sapphire. The interdiffusion process caused an increased film thickness, which was enhanced in proportion to the annealing temperature. It was confirmed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy. Thus, higher temperatures resulted in high Al contents in the b-(AlxGa1x)2O3 films. Also, the SIMS measurements show highly homogeneous Al contents throughout the b-(AlxGa1x)2O3 films annealed at 1200 C and above. Evaluated by x-ray diffraction (XRD), the Al content range of the samples is 0–0.81 for the b-Ga2O3 templates without annealing and with annealing up to 1500 C. Evaluated by UV-Vis spectroscopy, the optical bandgap range of the samples is 4.88–6.38 eV for the b-Ga2O3 templates without annealing and with annealing up to 1400 C, translating to the Al content range of 0–0.72. Moreover, the crystal quality of b-(AlxGa1x)2O3 improved as the Al composition became larger due to higher annealing temperatures. The proposed technique is promising for the preparation of b-(AlxGa1x)2O3 thin films without employing “direct-growth” techniques.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0027067
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
dc.titleWide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume118
dc.identifier.issue3
dc.identifier.pages032103
kaust.personLiao, Che-Hao
kaust.personLi, Kuang-Hui
kaust.personTorres-Castanedo, Carlos G.
kaust.personZhang, Guozheng
kaust.personLi, Xiaohang
dc.date.accepted2020-12-18
refterms.dateFOA2021-01-20T07:36:04Z


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