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dc.contributor.authorZhang, W.
dc.contributor.authorZhang, Y.
dc.contributor.authorJiang, B.
dc.contributor.authorFang, Bin
dc.contributor.authorZhong, H.
dc.contributor.authorLi, H.
dc.contributor.authorZeng, Z. M.
dc.contributor.authorYan, Shishen
dc.contributor.authorHan, G.
dc.contributor.authorLiu, G.
dc.contributor.authorYu, S.
dc.contributor.authorKang, S.
dc.date.accessioned2021-01-20T06:19:52Z
dc.date.available2021-01-20T06:19:52Z
dc.date.issued2021-01-04
dc.date.submitted2020-10-01
dc.identifier.citationZhang, W., Zhang, Y., Jiang, B., Fang, B., Zhong, H., Li, H., … Kang, S. (2021). Bias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane. Applied Physics Letters, 118(1), 012405. doi:10.1063/5.0031507
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/5.0031507
dc.identifier.urihttp://hdl.handle.net/10754/666941
dc.description.abstractWe reported microwave measurements on a nanoscale MgO-based magnetic tunnel junction having an elliptical shape with large aspect ratios to obtain enough in-plane shape anisotropy to ensure free layer magnetization along the long axis. Combined with the magnetization of a synthetic antiferromagnet pinned layer along the short axis, this results in the perpendicular configuration between the magnetizations of free and pinned layers. A steady high frequency oscillation up to 5 GHz was achieved in such devices at zero magnetic field. Meanwhile, a large frequency tunability of 0.11 Hz·cm2/mA (2.67 GHz/mA) was obtained. The micromagnetic simulations confirm the origin of the high oscillation frequency of our spin transfer nano-oscillators (STNOs). These results suggest the great possibility of improved integration and potential application of STNOs for developing the next-generation of on-chip oscillators.
dc.description.sponsorshipThis work was supported by the National Basic Research Program of China (Grant No. 2015CB921502), NSFC Nos.11627805 and 12074220, and 111 projects.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0031507
dc.titleBias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.rights.embargodate2022-01-04
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Physics, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China
dc.contributor.institutionKey Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu 215123, China
dc.identifier.volume118
dc.identifier.issue1
dc.identifier.pages012405
kaust.personFang, Bin
dc.date.accepted2020-12-17
dc.identifier.eid2-s2.0-85099203655


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