Bias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane
Zeng, Z. M.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Embargo End Date2022-01-04
Permanent link to this recordhttp://hdl.handle.net/10754/666941
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AbstractWe reported microwave measurements on a nanoscale MgO-based magnetic tunnel junction having an elliptical shape with large aspect ratios to obtain enough in-plane shape anisotropy to ensure free layer magnetization along the long axis. Combined with the magnetization of a synthetic antiferromagnet pinned layer along the short axis, this results in the perpendicular configuration between the magnetizations of free and pinned layers. A steady high frequency oscillation up to 5 GHz was achieved in such devices at zero magnetic field. Meanwhile, a large frequency tunability of 0.11 Hz·cm2/mA (2.67 GHz/mA) was obtained. The micromagnetic simulations confirm the origin of the high oscillation frequency of our spin transfer nano-oscillators (STNOs). These results suggest the great possibility of improved integration and potential application of STNOs for developing the next-generation of on-chip oscillators.
CitationZhang, W., Zhang, Y., Jiang, B., Fang, B., Zhong, H., Li, H., … Kang, S. (2021). Bias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane. Applied Physics Letters, 118(1), 012405. doi:10.1063/5.0031507
SponsorsThis work was supported by the National Basic Research Program of China (Grant No. 2015CB921502), NSFC Nos.11627805 and 12074220, and 111 projects.
JournalApplied Physics Letters