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dc.contributor.authorAftab, Sikandar
dc.contributor.authorSamiya, Ms
dc.contributor.authorHaq, Hafiz Mansoor Ul
dc.contributor.authorIqbal, Muhammad Waqas
dc.contributor.authorHussain, Muhammad
dc.contributor.authorYousuf, Saqlain
dc.contributor.authorRehman, Atteq Ur
dc.contributor.authorKhan, Muhammad Usman
dc.contributor.authorAhmed, Zaheer
dc.contributor.authorIqbal, Muhammad Zahir
dc.date.accessioned2021-01-17T08:25:24Z
dc.date.available2021-01-17T08:25:24Z
dc.date.issued2021
dc.date.submitted2020-09-29
dc.identifier.citationAftab, S., Samiya, M., Haq, H. M. U., Iqbal, M. W., Hussain, M., Yousuf, S., … Iqbal, M. Z. (2021). Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes. Journal of Materials Chemistry C, 9(1), 199–207. doi:10.1039/d0tc04642f
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/d0tc04642f
dc.identifier.urihttp://hdl.handle.net/10754/666915
dc.description.abstractHere, novel lateral PtSe2 p-n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN). A stable photo doping effect was achieved for tuning the polarity of PtSe2-based field-effect transistors (FETs). The constructed diodes display excellent rectifying performance, with a rectification ratio of up to ∼1.0 × 105 and an ideality factor of ∼1.3. Distinctive self-biased photovoltaic behavior was detected, specifically in the positive open-circuit voltage (Voc = 0.32 V) at zero source-drain current (Ids), and also the negative short-circuit current (Isc = 16.2 nA) at zero source-drain voltage (Vds) generated for the p-n diode state upon the illumination of incident light (600 nm, 40 mW cm-2). Moreover, output Voc switching behavior was achieved for the p-n diode state by switching the input light signal on and off, with a photoresponse over the broadband spectral range of 200-1200 nm. Various photovoltaic parameters were also measured. Also, using this elegant approach, homoinverters were fabricated that reached a maximum gain of ∼30 (VDD = 2 V). These findings pave the way to developing self-biased photovoltaic devices by exploiting 2D noble metal dichalcogenide materials. This journal is
dc.description.sponsorshipThis work is funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with project no. HEC/R&D/NRPU/2017/7876 and 5544/ KPK/NRPU/R&D/HEC/2016.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://xlink.rsc.org/?DOI=D0TC04642F
dc.rightsArchived with thanks to Journal of Materials Chemistry C
dc.titleSingle nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Materials Chemistry C
dc.rights.embargodate2022-01-17
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Engineering Science, Simon Fraser University Burnaby BC.
dc.contributor.institutionDepartment of Civil and Environmental Engineering, Sejong University 209 Neungdong-ro Gwangjin-gu Korea
dc.contributor.institutionDepartment of Physics, Riphah International University 14 Ali Road Lahore Pakistan
dc.contributor.institutionDepartment of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University Seoul 05006.
dc.contributor.institutionDepartment of Physics, Sungkyunkwan University Suwon 440-746 Email: physics.sikandar@gmail.com;aftab_sikandar@sfu.ca
dc.contributor.institutionNational Key Laboratory of Tunable Laser Technology, Institute of Optoelectronics, Department of Electronics Science and Technology, Harbin Institute of Technology Harbin 150080 China
dc.contributor.institutionDepartment of Biochemistry, University of Agriculture Faisalabad Pakistan
dc.contributor.institutionNanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi 23640 Khyber Pakhtunkhwa.
dc.identifier.volume9
dc.identifier.issue1
dc.identifier.pages199-207
kaust.personRehman, Atteq Ur
dc.date.accepted2020-11-13
dc.identifier.eid2-s2.0-85099159490


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