Single nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
dc.contributor.author | Aftab, Sikandar | |
dc.contributor.author | Samiya, Ms | |
dc.contributor.author | Haq, Hafiz Mansoor Ul | |
dc.contributor.author | Iqbal, Muhammad Waqas | |
dc.contributor.author | Hussain, Muhammad | |
dc.contributor.author | Yousuf, Saqlain | |
dc.contributor.author | Rehman, Atteq Ur | |
dc.contributor.author | Khan, Muhammad Usman | |
dc.contributor.author | Ahmed, Zaheer | |
dc.contributor.author | Iqbal, Muhammad Zahir | |
dc.date.accessioned | 2021-01-17T08:25:24Z | |
dc.date.available | 2021-01-17T08:25:24Z | |
dc.date.issued | 2021 | |
dc.date.submitted | 2020-09-29 | |
dc.identifier.citation | Aftab, S., Samiya, M., Haq, H. M. U., Iqbal, M. W., Hussain, M., Yousuf, S., … Iqbal, M. Z. (2021). Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes. Journal of Materials Chemistry C, 9(1), 199–207. doi:10.1039/d0tc04642f | |
dc.identifier.issn | 2050-7526 | |
dc.identifier.issn | 2050-7534 | |
dc.identifier.doi | 10.1039/d0tc04642f | |
dc.identifier.uri | http://hdl.handle.net/10754/666915 | |
dc.description.abstract | Here, novel lateral PtSe2 p-n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN). A stable photo doping effect was achieved for tuning the polarity of PtSe2-based field-effect transistors (FETs). The constructed diodes display excellent rectifying performance, with a rectification ratio of up to ∼1.0 × 105 and an ideality factor of ∼1.3. Distinctive self-biased photovoltaic behavior was detected, specifically in the positive open-circuit voltage (Voc = 0.32 V) at zero source-drain current (Ids), and also the negative short-circuit current (Isc = 16.2 nA) at zero source-drain voltage (Vds) generated for the p-n diode state upon the illumination of incident light (600 nm, 40 mW cm-2). Moreover, output Voc switching behavior was achieved for the p-n diode state by switching the input light signal on and off, with a photoresponse over the broadband spectral range of 200-1200 nm. Various photovoltaic parameters were also measured. Also, using this elegant approach, homoinverters were fabricated that reached a maximum gain of ∼30 (VDD = 2 V). These findings pave the way to developing self-biased photovoltaic devices by exploiting 2D noble metal dichalcogenide materials. This journal is | |
dc.description.sponsorship | This work is funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with project no. HEC/R&D/NRPU/2017/7876 and 5544/ KPK/NRPU/R&D/HEC/2016. | |
dc.publisher | Royal Society of Chemistry (RSC) | |
dc.relation.url | http://xlink.rsc.org/?DOI=D0TC04642F | |
dc.rights | Archived with thanks to Journal of Materials Chemistry C | |
dc.title | Single nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes | |
dc.type | Article | |
dc.contributor.department | KAUST Solar Center (KSC) | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | Journal of Materials Chemistry C | |
dc.rights.embargodate | 2022-01-17 | |
dc.eprint.version | Post-print | |
dc.contributor.institution | Department of Engineering Science, Simon Fraser University Burnaby BC. | |
dc.contributor.institution | Department of Civil and Environmental Engineering, Sejong University 209 Neungdong-ro Gwangjin-gu Korea | |
dc.contributor.institution | Department of Physics, Riphah International University 14 Ali Road Lahore Pakistan | |
dc.contributor.institution | Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University Seoul 05006. | |
dc.contributor.institution | Department of Physics, Sungkyunkwan University Suwon 440-746 Email: physics.sikandar@gmail.com;aftab_sikandar@sfu.ca | |
dc.contributor.institution | National Key Laboratory of Tunable Laser Technology, Institute of Optoelectronics, Department of Electronics Science and Technology, Harbin Institute of Technology Harbin 150080 China | |
dc.contributor.institution | Department of Biochemistry, University of Agriculture Faisalabad Pakistan | |
dc.contributor.institution | Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology Topi 23640 Khyber Pakhtunkhwa. | |
dc.identifier.volume | 9 | |
dc.identifier.issue | 1 | |
dc.identifier.pages | 199-207 | |
kaust.person | Rehman, Atteq Ur | |
dc.date.accepted | 2020-11-13 | |
dc.identifier.eid | 2-s2.0-85099159490 |
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