Single nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
Type
ArticleAuthors
Aftab, Sikandar
Samiya, Ms
Haq, Hafiz Mansoor Ul
Iqbal, Muhammad Waqas
Hussain, Muhammad
Yousuf, Saqlain
Rehman, Atteq Ur
Khan, Muhammad Usman
Ahmed, Zaheer
Iqbal, Muhammad Zahir

KAUST Department
Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi ArabiaDate
2021Embargo End Date
2022-01-17Submitted Date
2020-09-29Permanent link to this record
http://hdl.handle.net/10754/666915
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Show full item recordAbstract
Here, novel lateral PtSe2 p-n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN). A stable photo doping effect was achieved for tuning the polarity of PtSe2-based field-effect transistors (FETs). The constructed diodes display excellent rectifying performance, with a rectification ratio of up to ∼1.0 × 105 and an ideality factor of ∼1.3. Distinctive self-biased photovoltaic behavior was detected, specifically in the positive open-circuit voltage (Voc = 0.32 V) at zero source-drain current (Ids), and also the negative short-circuit current (Isc = 16.2 nA) at zero source-drain voltage (Vds) generated for the p-n diode state upon the illumination of incident light (600 nm, 40 mW cm-2). Moreover, output Voc switching behavior was achieved for the p-n diode state by switching the input light signal on and off, with a photoresponse over the broadband spectral range of 200-1200 nm. Various photovoltaic parameters were also measured. Also, using this elegant approach, homoinverters were fabricated that reached a maximum gain of ∼30 (VDD = 2 V). These findings pave the way to developing self-biased photovoltaic devices by exploiting 2D noble metal dichalcogenide materials. This journal isCitation
Aftab, S., Samiya, M., Haq, H. M. U., Iqbal, M. W., Hussain, M., Yousuf, S., … Iqbal, M. Z. (2021). Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes. Journal of Materials Chemistry C, 9(1), 199–207. doi:10.1039/d0tc04642fSponsors
This work is funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with project no. HEC/R&D/NRPU/2017/7876 and 5544/ KPK/NRPU/R&D/HEC/2016.Publisher
Royal Society of Chemistry (RSC)Journal
Journal of Materials Chemistry CAdditional Links
http://xlink.rsc.org/?DOI=D0TC04642Fae974a485f413a2113503eed53cd6c53
10.1039/d0tc04642f