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    Single nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes

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    Type
    Article
    Authors
    Aftab, Sikandar cc
    Samiya, Ms
    Haq, Hafiz Mansoor Ul
    Iqbal, Muhammad Waqas
    Hussain, Muhammad
    Yousuf, Saqlain
    Rehman, Atteq Ur
    Khan, Muhammad Usman
    Ahmed, Zaheer
    Iqbal, Muhammad Zahir cc
    KAUST Department
    Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia
    Date
    2021
    Embargo End Date
    2022-01-17
    Submitted Date
    2020-09-29
    Permanent link to this record
    http://hdl.handle.net/10754/666915
    
    Metadata
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    Abstract
    Here, novel lateral PtSe2 p-n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN). A stable photo doping effect was achieved for tuning the polarity of PtSe2-based field-effect transistors (FETs). The constructed diodes display excellent rectifying performance, with a rectification ratio of up to ∼1.0 × 105 and an ideality factor of ∼1.3. Distinctive self-biased photovoltaic behavior was detected, specifically in the positive open-circuit voltage (Voc = 0.32 V) at zero source-drain current (Ids), and also the negative short-circuit current (Isc = 16.2 nA) at zero source-drain voltage (Vds) generated for the p-n diode state upon the illumination of incident light (600 nm, 40 mW cm-2). Moreover, output Voc switching behavior was achieved for the p-n diode state by switching the input light signal on and off, with a photoresponse over the broadband spectral range of 200-1200 nm. Various photovoltaic parameters were also measured. Also, using this elegant approach, homoinverters were fabricated that reached a maximum gain of ∼30 (VDD = 2 V). These findings pave the way to developing self-biased photovoltaic devices by exploiting 2D noble metal dichalcogenide materials. This journal is
    Citation
    Aftab, S., Samiya, M., Haq, H. M. U., Iqbal, M. W., Hussain, M., Yousuf, S., … Iqbal, M. Z. (2021). Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes. Journal of Materials Chemistry C, 9(1), 199–207. doi:10.1039/d0tc04642f
    Sponsors
    This work is funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with project no. HEC/R&D/NRPU/2017/7876 and 5544/ KPK/NRPU/R&D/HEC/2016.
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Journal of Materials Chemistry C
    DOI
    10.1039/d0tc04642f
    Additional Links
    http://xlink.rsc.org/?DOI=D0TC04642F
    ae974a485f413a2113503eed53cd6c53
    10.1039/d0tc04642f
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