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dc.contributor.authorChen, Li
dc.contributor.authorDai, Yijun
dc.contributor.authorLi, Liang
dc.contributor.authorJiang, Jiean
dc.contributor.authorXu, Houqiang
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorNg, Tien Khee
dc.contributor.authorCui, Mei
dc.contributor.authorGuo, Wei
dc.contributor.authorSun, Haiding
dc.contributor.authorYe, Jichun
dc.date.accessioned2021-01-17T06:12:37Z
dc.date.available2021-01-17T06:12:37Z
dc.date.issued2020-10-15
dc.date.submitted2020-04-06
dc.identifier.citationChen, L., Dai, Y., Li, L., Jiang, J., Xu, H., Li, K., … Ye, J. (2021). Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer. Journal of Alloys and Compounds, 861, 157589. doi:10.1016/j.jallcom.2020.157589
dc.identifier.issn0925-8388
dc.identifier.doi10.1016/j.jallcom.2020.157589
dc.identifier.urihttp://hdl.handle.net/10754/666910
dc.description.abstractIn this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.
dc.description.sponsorshipThis work was supported by National Key Research and Development Program of China (2016YFB0400802), National Natural Science Foundation of China (61974149, 61704176), Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145), and Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0925838820339530
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Alloys and Compounds. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Alloys and Compounds, [861, , (2020-10-15)] DOI: 10.1016/j.jallcom.2020.157589 . © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleCarrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalJournal of Alloys and Compounds
dc.rights.embargodate2022-10-15
dc.eprint.versionPost-print
dc.contributor.institutionNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, China.
dc.contributor.institutionUniversity of Chinese Academy of Sciences, Beijing, 100049, China.
dc.contributor.institutionSchool of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
dc.identifier.volume861
dc.identifier.pages157589
kaust.personLi, Kuang-Hui
kaust.personNg, Tien Khee
dc.date.accepted2020-10-13
refterms.dateFOA2021-01-17T06:14:11Z


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