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    Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

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    Name:
    carrier localization.pdf
    Size:
    1.310Mb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2022-10-15
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    Type
    Article
    Authors
    Chen, Li
    Dai, Yijun
    Li, Liang
    Jiang, Jiean
    Xu, Houqiang
    Li, Kuang-Hui cc
    Ng, Tien Khee cc
    Cui, Mei
    Guo, Wei
    Sun, Haiding
    Ye, Jichun
    KAUST Department
    Material Science and Engineering Program
    Material Science and Engineering
    Physical Science and Engineering (PSE) Division
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2020-10-15
    Embargo End Date
    2022-10-15
    Submitted Date
    2020-04-06
    Permanent link to this record
    http://hdl.handle.net/10754/666910
    
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    Abstract
    In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.
    Citation
    Chen, L., Dai, Y., Li, L., Jiang, J., Xu, H., Li, K., … Ye, J. (2021). Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer. Journal of Alloys and Compounds, 861, 157589. doi:10.1016/j.jallcom.2020.157589
    Sponsors
    This work was supported by National Key Research and Development Program of China (2016YFB0400802), National Natural Science Foundation of China (61974149, 61704176), Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145), and Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).
    Publisher
    Elsevier BV
    Journal
    Journal of Alloys and Compounds
    DOI
    10.1016/j.jallcom.2020.157589
    Additional Links
    https://linkinghub.elsevier.com/retrieve/pii/S0925838820339530
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.jallcom.2020.157589
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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