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dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2021-01-10T12:42:22Z
dc.date.available2021-01-10T12:42:22Z
dc.date.issued2020-12-31
dc.identifier.citationOhkawa, K. (2020). Simulation of Nitride Semiconductor MOVPE. Digital Encyclopedia of Applied Physics, 1–20. doi:10.1002/3527600434.eap941
dc.identifier.isbn9783527268412
dc.identifier.isbn9783527600434
dc.identifier.doi10.1002/3527600434.eap941
dc.identifier.urihttp://hdl.handle.net/10754/666855
dc.description.abstractThis article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/3527600434.eap941
dc.rightsArchived with thanks to Wiley
dc.titleSimulation of Nitride Semiconductor MOVPE
dc.typeBook Chapter
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.rights.embargodate2021-12-31
dc.eprint.versionPost-print
dc.identifier.pages1-20
kaust.personOhkawa, Kazuhiro
refterms.dateFOA2021-01-10T12:44:14Z


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