Name:
2020.12 Final- Simulation of nitride semiconductor MOVPE.pdf
Size:
1.666Mb
Format:
PDF
Description:
Accepted manuscript
Type
Book ChapterAuthors
Ohkawa, Kazuhiro
KAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionElectrical and Computer Engineering Program
Date
2020-12-31Embargo End Date
2021-12-31Permanent link to this record
http://hdl.handle.net/10754/666855
Metadata
Show full item recordAbstract
This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.Citation
Ohkawa, K. (2020). Simulation of Nitride Semiconductor MOVPE. Digital Encyclopedia of Applied Physics, 1–20. doi:10.1002/3527600434.eap941Publisher
WileyISBN
97835272684129783527600434
Additional Links
https://onlinelibrary.wiley.com/doi/10.1002/3527600434.eap941ae974a485f413a2113503eed53cd6c53
10.1002/3527600434.eap941