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    Simulation of Nitride Semiconductor MOVPE

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    Name:
    2020.12 Final- Simulation of nitride semiconductor MOVPE.pdf
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    1.666Mb
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    PDF
    Description:
    Accepted manuscript
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    Type
    Book Chapter
    Authors
    Ohkawa, Kazuhiro cc
    KAUST Department
    Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
    Electrical and Computer Engineering Program
    Date
    2020-12-31
    Embargo End Date
    2021-12-31
    Permanent link to this record
    http://hdl.handle.net/10754/666855
    
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    Abstract
    This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.
    Citation
    Ohkawa, K. (2020). Simulation of Nitride Semiconductor MOVPE. Digital Encyclopedia of Applied Physics, 1–20. doi:10.1002/3527600434.eap941
    Publisher
    Wiley
    ISBN
    9783527268412
    9783527600434
    DOI
    10.1002/3527600434.eap941
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/3527600434.eap941
    ae974a485f413a2113503eed53cd6c53
    10.1002/3527600434.eap941
    Scopus Count
    Collections
    Electrical and Computer Engineering Program; Book Chapters; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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