Type
Book ChapterKAUST Department
Physical Science and Engineering (PSE) DivisionMaterial Science and Engineering Program
KAUST Solar Center (KSC)
Date
2020-12Permanent link to this record
http://hdl.handle.net/10754/666842
Metadata
Show full item recordAbstract
Metal oxide (MO) semiconductors are an important class of materials for a large range of (opto)electronic applications, including as active channel material in thinfilm transistors (TFTs) for display technologies. Research effort in this field focuses on the improvement of device characteristics, with one of the main figures of merit being the electron mobility, as well as the stability against bias stress. While TFTs with a single layer MO as the channel material are limited by the inherent bulk properties of that MO, using heterojunctions (HJs) of bilayer or multilayer stacks instead offers ways to overcome those limitations. For example, interface effects such as the formation of a two-dimensional electron gas, can enhance the mobility beyond that of the single material components of the HJ. On the other hand, the combination of two layers with distinct functionalities (e.g. high mobility of material 1 with high stability and low off-currents for material 2) gives rise to well-balanced overall device characteristics that would not be achievable with either MO by itself. This chapter gives an overview of the materials, mechanisms and improvements involved with heterojunction metal oxide TFTsCitation
Faber, H., Yarali, E., Yengel, E., & Anthopoulos, T. D. (2020). Heterojunction oxide thin-film transistors. Semiconducting Metal Oxide Thin-Film Transistors. doi:10.1088/978-0-7503-2556-1ch5Publisher
IOP PublishingISBN
9780750325561ae974a485f413a2113503eed53cd6c53
10.1088/978-0-7503-2556-1ch5