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dc.contributor.authorOkamoto, Shungo
dc.contributor.authorSaito, Naomichi
dc.contributor.authorIto, Kotaro
dc.contributor.authorMa, Bei
dc.contributor.authorMorita, Ken
dc.contributor.authorIida, Daisuke
dc.contributor.authorOhkawa, Kazuhiro
dc.contributor.authorIshitani, Yoshihiro
dc.date.accessioned2021-01-04T13:10:22Z
dc.date.available2021-01-04T13:10:22Z
dc.date.issued2020-12-11
dc.identifier.citationOkamoto, S., Saito, N., Ito, K., Ma, B., Morita, K., Iida, D., … Ishitani, Y. (2020). Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams. ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. doi:10.1115/ipack2020-2570
dc.identifier.isbn9780791884041
dc.identifier.doi10.1115/IPACK2020-2570
dc.identifier.urihttp://hdl.handle.net/10754/666806
dc.description.abstractLocal heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.
dc.description.sponsorshipThis study was partly supported by the Grant-in-Aid for Scientific Research of the Japan Society for the Promotion of Science (16H06425 and 17H02772) and King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01)
dc.publisherASME International
dc.relation.urlhttps://asmedigitalcollection.asme.org/InterPACK/proceedings/InterPACK2020/84041/Virtual,%20Online/1092170
dc.rightsArchived with thanks to American Society of Mechanical Engineers
dc.titleLocal heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.conference.date2020-10-27 to 2020-10-29
dc.conference.nameASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2020
dc.conference.locationVirtual, Online
dc.eprint.versionPost-print
dc.contributor.institutionChiba University, Chiba City, Japan
kaust.personIida, Daisuke
kaust.personOhkawa, Kazuhiro
kaust.personIshitani, Yoshihiro
kaust.grant.numberBAS/1/1676-01-01
dc.identifier.eid2-s2.0-85098333192
refterms.dateFOA2021-01-07T06:37:14Z


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