Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors
Kreß, Joshua A.
Hacker, Christina A.
Naphade, Dipti R.
Anthopoulos, Thomas D.
KAUST DepartmentKAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
King Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955–6900 Saudi Arabia
Material Science and Engineering Program
KAUST Grant NumberOSR-CRG2018-3783
Embargo End Date2021-12-31
Permanent link to this recordhttp://hdl.handle.net/10754/666803
MetadataShow full item record
AbstractControlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)<sub>2</sub> PbBr<sub>4</sub> ) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctylbenzothieno[3,2-b]benzothiophene (C<sub>8</sub> -BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)<sub>2</sub> PbBr<sub>4</sub> domains overlaid by a ≈5-nm-thin C<sub>8</sub> -BTBT layer. Transistors with (PEA)<sub>2</sub> PbBr<sub>4</sub> /C<sub>8</sub> -BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C<sub>8</sub> -BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)<sub>2</sub> PbBr<sub>4</sub> act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (10<sup>4</sup> ), good data retention, and high endurance (>10<sup>4</sup> cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes.
CitationGedda, M., Yengel, E., Faber, H., Paulus, F., Kreß, J. A., Tang, M., … Anthopoulos, T. D. (2020). Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors. Advanced Materials, 2003137. doi:10.1002/adma.202003137
SponsorsThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-CRG2018-3783. The authors thank J. Zaumseil for access to the 2D-XRD facilities. This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (ERC Grant Agreement no. 714067, ENERGYMAPS). G.V. acknowledges funding from the “Chaire de Recherche Rennes Metropole” project.
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