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dc.contributor.authorShafa, Muhammad
dc.contributor.authorAravindh, S. Assa
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorMahmoud, Saleh T.
dc.contributor.authorPan, Yi
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorNajar, Adel
dc.date.accessioned2020-12-27T11:28:53Z
dc.date.available2020-12-27T11:28:53Z
dc.date.issued2020-12
dc.date.submitted2020-05-15
dc.identifier.citationShafa, M., Aravindh, S. A., Hedhili, M. N., Mahmoud, S. T., Pan, Y., Ng, T. K., … Najar, A. (2020). Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching. International Journal of Hydrogen Energy. doi:10.1016/j.ijhydene.2020.10.275
dc.identifier.issn0360-3199
dc.identifier.doi10.1016/j.ijhydene.2020.10.275
dc.identifier.urihttp://hdl.handle.net/10754/666672
dc.description.abstractHigh-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.
dc.description.sponsorshipThis work was supported by Projects No. UPAR 31S443 & 31S214 from UAE University. M. Shafa and Y. Pan acknowledge the National Key R&D Program of China (2017YFA0206202), National Science Foundation of China (11704303) and China Postdoctoral Science Foundation Grant (2019M663691). S. Assa Aravindh gratefully acknowledges CSC – IT Center for Science, Finland for computational resources and Academy of Finland (#311934) for funding.
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0360319920344736
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in International Journal of Hydrogen Energy. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in International Journal of Hydrogen Energy, [, , (2020-12)] DOI: 10.1016/j.ijhydene.2020.10.275 . © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleImproved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching
dc.typeArticle
dc.contributor.departmentSurface Science
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalInternational Journal of Hydrogen Energy
dc.rights.embargodate2021-12-01
dc.eprint.versionPost-print
dc.contributor.institutionState Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P. R. China
dc.contributor.institutionNano and Molecular Systems Research Unit, University of Oulu, P.O. Box 8000, FI-90014, Oulu, Finland
dc.contributor.institutionDepartment of Physics, College of Science, United Arab Emirates University, Al Ain 15551, United Arab Emirates
kaust.personHedhili, Mohamed N.
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
dc.date.accepted2020-10-21
dc.identifier.eid2-s2.0-85097876037
refterms.dateFOA2020-12-27T12:11:16Z


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