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    Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

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    Name:
    Revised Manuscript_Clean (1).pdf
    Size:
    1.657Mb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2021-12-01
    Download
    Type
    Article
    Authors
    Shafa, Muhammad
    Aravindh, S. Assa
    Hedhili, Mohamed N. cc
    Mahmoud, Saleh T.
    Pan, Yi
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    Najar, Adel
    KAUST Department
    Surface Science
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Date
    2020-12
    Embargo End Date
    2021-12-01
    Submitted Date
    2020-05-15
    Permanent link to this record
    http://hdl.handle.net/10754/666672
    
    Metadata
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    Abstract
    High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.
    Citation
    Shafa, M., Aravindh, S. A., Hedhili, M. N., Mahmoud, S. T., Pan, Y., Ng, T. K., … Najar, A. (2020). Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching. International Journal of Hydrogen Energy. doi:10.1016/j.ijhydene.2020.10.275
    Sponsors
    This work was supported by Projects No. UPAR 31S443 & 31S214 from UAE University. M. Shafa and Y. Pan acknowledge the National Key R&D Program of China (2017YFA0206202), National Science Foundation of China (11704303) and China Postdoctoral Science Foundation Grant (2019M663691). S. Assa Aravindh gratefully acknowledges CSC – IT Center for Science, Finland for computational resources and Academy of Finland (#311934) for funding.
    Publisher
    Elsevier BV
    Journal
    International Journal of Hydrogen Energy
    DOI
    10.1016/j.ijhydene.2020.10.275
    Additional Links
    https://linkinghub.elsevier.com/retrieve/pii/S0360319920344736
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.ijhydene.2020.10.275
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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