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dc.contributor.authorEliwa, Mahmoud N.
dc.contributor.authorAlatawi, Abdullah
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorAlkhazragi, Omar
dc.contributor.authorAshry, Islam
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.identifier.citationEliwa, M. N., Alatawi, A., Holguin-Lerma, J. A., Alkhazragi, O., Ashry, I., Ng, T. K., & Ooi, B. S. (2020). Single-port superluminescent-diode gain-chip for tunable single-wavelength and dual-wavelength blue-laser. IEEE Photonics Journal, 1–1. doi:10.1109/jphot.2020.3046296
dc.description.abstractReconfigurable photonic technology combining multiple functionalities in a single gain-chip is a crucial light-based platform for enabling hybrid applications. Here, we report on achieving a widely tunable and reconfigurable blue laser source using a single-port gain medium based on an InGaN/GaN superluminescent diode (SLD). As compared to tunable laser-diode emitters based solely on stimulated emission from a laser diode used as the gain medium, our amplified spontaneous emission system is capable of fast switching between the stimulated and amplified spontaneous emission regimes for on-demand use of time-incoherent, or time-coherent light with single- or dual-wavelengths. The single- and dual-wavelength laser tunability is designed using various external cavity (EC) configurations for a continuous selection and smooth transition of the emission wavelength from 436 nm–443 nm. Moreover, the InGaN SLD can amplify the optical power within the EC configuration by 6.5 dB. Thus, the prototype system opens up a viable route for designing reconfigurable light sources based on a single gain chip, and promises disruptive innovation for medical instrumentation, optical sensing technology, and optical communication.
dc.description.sponsorshipThis work is funded by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)(OSR-CRG2017-3417). The authors acknowledge KAUST baseline funding BAS/1/1614-01-01 and KAUST CEMSE funding GEN/1/6607-01-01. T.K.N. and B.S.O. acknowledge support from King Abdulaziz City for Science and Technology for the establishment of KACST Technology Innovation Center on Solid-State Lighting at KAUST, Grant no. KACST TIC R2-FP008. The authors further acknowledge access to the KAUST Imaging and Characterization Core Lab for the use of scanning electron microscope.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 License.
dc.subjectAmplified spontaneous emission
dc.subjectsuperluminescent diode
dc.subjecttunable laser
dc.titleSingle-port superluminescent-diode gain-chip for tunable single-wavelength and dual-wavelength blue-laser
dc.contributor.departmentPhotonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia,
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.identifier.journalIEEE Photonics Journal
dc.eprint.versionPublisher's Version/PDF
kaust.personEliwa, Mahmoud N.
kaust.personAlatawi, Abdullah
kaust.personHolguin Lerma, Jorge Alberto
kaust.personAlkhazragi, Omar
kaust.personAshry, Islam
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.acknowledged.supportUnitKAUST baseline funding
kaust.acknowledged.supportUnitKAUST Imaging and Characterization Core Lab
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)
kaust.acknowledged.supportUnitTechnology Innovation Center

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