Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation
AuthorsNizovtsev, A. P.
Kilin, S. Ya
Pushkarchuk, A. L.
Kuten, S. A.
Poklonski, N. A.
Michels, Dominik L.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Computer Science Program
Visual Computing Center (VCC)
Embargo End Date2021-12-04
Permanent link to this recordhttp://hdl.handle.net/10754/666354
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AbstractAbstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.
CitationNizovtsev, A. P., Kilin, S. Y., Pushkarchuk, A. L., Kuten, S. A., Poklonski, N. A., Michels, D., … Jelezko, F. (2020). Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation. Semiconductors, 54(12), 1685–1688. doi:10.1134/s1063782620120271
SponsorsThis work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).
PublisherPleiades Publishing Ltd